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TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
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| Part No. |
TIM4450-60SL
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| OCR Text |
...el T HIGH POWER P1dB=48.0dBm at 4.4GHz to 5.0GHz T HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz T BROAD BAND INTERNALLY MATCHED FET T HERMETICAL...45 15.0 0.8 11.8 100
CHARACTERISTICS SYMBOL CONDITIONS Output Power at 1dB Gain P1dB Compres... |
| Description |
LOW INTERMODULATION DISTORTION
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| File Size |
79.32K /
4 Page |
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it Online |
Download Datasheet
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM4450-35SL
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| OCR Text |
...evel HIGH POWER P1dB=45.5dBm at 4.4GHz to 5.0GHz HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Gain Compression P... |
| Description |
MICROWAVE POWER GaAs FET
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| File Size |
97.20K /
4 Page |
View
it Online |
Download Datasheet
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Price and Availability
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