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Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT5010LVR
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| OCR Text |
...ts Amps
500 47 188 30 40 520 4.16 -55 to 150 300 47 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dis...434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm
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| File Size |
64.27K /
4 Page |
 View
it Online |
Download Datasheet
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
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| Part No. |
APT5012 APT5012WVR
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| OCR Text |
...0 450 3.6 -55 to 150 300 40 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear ...434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
... |
| Description |
POWER MOS V 500V 40A 0.120 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
61.40K /
4 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
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| Part No. |
APT5014B2LC APT5014LLC APT5014
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| OCR Text |
...petitive and Non-Repetitive)
1 4
Volts Watts W/C C Amps mJ
1600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDS...434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
... |
| Description |
POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
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| File Size |
34.16K /
2 Page |
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it Online |
Download Datasheet |
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Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT5014B2VR
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| OCR Text |
...0 450 3.6 -55 to 150 300 37 35
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear ...434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 37A 0.140 Ohm
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| File Size |
61.78K /
4 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technology
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| Part No. |
APT5014BFLL APT5014SFLL
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| OCR Text |
...petitive and Non-Repetitive)
1 4
Volts Watts W/C C Amps mJ
-55 to 150
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(o...434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
58.46K /
2 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5014LVR
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| OCR Text |
...0 450 3.6 -55 to 150 300 37 35
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear ...434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
... |
| Description |
POWER MOS V 500V 37A 0.140 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
63.64K /
4 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technology
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| Part No. |
APT5014 APT5014BLL APT5014SLL
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| OCR Text |
...petitive and Non-Repetitive)
1 4
Volts Watts W/C C Amps mJ
-55 to 150
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(o...434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
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| File Size |
51.46K /
2 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
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| Part No. |
APT5015BLC
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| OCR Text |
...petitive and Non-Repetitive)
1 4
Volts Watts W/C C Amps mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDS...434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
... |
| Description |
POWER MOS VI 500V 32A 0.150 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
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| File Size |
28.40K /
2 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5015 APT5015BVR
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| OCR Text |
... 370 2.96 -55 to 150 300 32 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear ...434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
... |
| Description |
POWER MOS V 500V 32A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
60.16K /
4 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT5016BLL APT5016SLL APT5014 APT5014BLL APT5014SLL APT5016
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| OCR Text |
...petitive and Non-Repetitive)
1 4
Volts Watts W/C C Amps mJ
-55 to 150
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(o...434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
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| File Size |
51.47K /
2 Page |
View
it Online |
Download Datasheet |
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