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POWERINT[Power Integrations, Inc.]
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| Part No. |
DI-18
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| OCR Text |
...I limits * Meets 2.5 kV EN61000-4-5 differential surge * Ultra-low leakage current design <5 A * EE13 core for low cost and small size
Li...18
www.powerint.com
September 2002
DI-18
* To maintain the 20% CC tolerance the primary in... |
| Description |
Low Cost 2.75 W CV/CC Charger or Adapter
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| File Size |
45.23K /
2 Page |
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it Online |
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Bel Fuse, Inc.
Ecliptek, Corp.
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| Part No. |
18-013-993 18-013-990 18-013-991 18-013-012 18-013-013
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| OCR Text |
...ressure Gauges R /8 , G 1/8A, 1/4 x 18 N.P.T.
1
Technical Data Medium: Compressed air, oil and gases or liquids which do not corrode copper alloys Operating Temperature: -20C* to +60C *Consult our Technical Service for use below +2C Ope... |
| Description |
GAUGE PRESSURE
MANOMETER DIRMONT 0 BIS 6 BAR 0.125ZOLL
MANOMETER PANMONT 0 BIS 10 BAR 0.125ZOLL 压力表PANMONT 0国际清算银行10英美0.125ZOLL
MANOMETER 0 BIS 4BAR BSP 0.125ZOLL 国际清算银行4BAR压力0 BSP0.125ZOLL
MANOMETER DIRMONT 0 BIS 10 BAR 0.125ZOLL
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| File Size |
56.81K /
4 Page |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CT90AM-18
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| OCR Text |
...q Low VCE Saturation Voltage
4.0
GATE COLLECTOR EMITTER COLLECTOR
TO-3PL
APPLICATION Microwave oven, Electoromagnetic ...18
INSULATED GATE BIPOLAR TRANSISTOR
ELECTRICAL CHARACTERISTICS
Symbol ICES IGES VGE (th) VCE (... |
| Description |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
22.58K /
2 Page |
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Mitsubishi Electric Corporation
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| Part No. |
BCR8PM-18
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| OCR Text |
...n 3.6 5.0 1.2 8.5 10.5 max 5.2 4.5 17 2.54 2.8 0.5 2.6 a a a t 1 terminal t 2 terminal gate terminal ] i t (rms) ........................18 medium power use insulated type, planar passivation type ] 2. measurement using the gate trigger ... |
| Description |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
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| File Size |
67.99K /
5 Page |
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Vishay Semiconductors
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| Part No. |
BAT43W-V-G-18
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| OCR Text |
...l reverse characteristics fig. 4 - typical capacitance vs. reverse voltage electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition p art symbol min. typ. max. unit reverse breakdown voltage i r = ... |
| Description |
SCHOTTKY DIODE SOD123-E3-G
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| File Size |
77.27K /
4 Page |
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Fujitsu
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| Part No. |
MB811L323229-18 MB811L323229-12 E511410
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| OCR Text |
... Mode Burst length : BL = 1, 2, 4, 8, full column (256) CAS latency = 2 Auto-and Self-refresh CKE power down mode Byte control with DQM0 to DQM3
* * * *
2
MB811L323229-12/18
s PAD LAYOUT
BME VSS VDD DQ24 DQ23 VSSQ VCCQ DQ25 ... |
| Description |
Consumer FCRAM
From old datasheet system
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| File Size |
157.95K /
45 Page |
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MINI[Mini-Circuits]
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| Part No. |
BLK-18
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| OCR Text |
...NCY (GHz)
0.01-0.1 0.1-1.0 1.0-4.0 4.0-8.0 8.0-18
INSERTION LOSS (dB) Max. Typ.
0.02 0.07 0.15 0.38 1.00 0.2 0.3 0.5 1.0 --
RETURN LOSS (dB) Typ. Min.
26 36 24 18 12 20 20 20 15 --
Outline Dimensions ( inch ) mm
B D .46 1.18 11... |
| Description |
Coaxial DC Block 0.01 to 18 GHz
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| File Size |
44.21K /
1 Page |
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it Online |
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Price and Availability
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