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  3.5-7ghz Datasheet PDF File

For 3.5-7ghz Found Datasheets File :: 736    Search Time::1.844ms    
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    2SC5415

SANYO[Sanyo Semicon Device]
Part No. 2SC5415
OCR Text ... [2SC5415] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collect...
Description NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications

File Size 45.72K  /  6 Page

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    TIM7785-16UL

TOSHIBA[Toshiba Semiconductor]
Part No. TIM7785-16UL
OCR Text ...m Gate Source Drain 20.40.3 0.1 -0.05 24.5 MAX. 16.4 MAX. +0.1 2.5 MIN. 2.60.3 17.40.4 8.00.2 0.2 MAX. 1.40.3 HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time ...
Description MICROWAVE POWER GaAs FET

File Size 69.02K  /  4 Page

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    FMM5017VF

Fujitsu Component Limited.
Fujitsu Media Devices Limited
Part No. FMM5017VF
OCR Text ...Typ. Max. ~ 29.0 20.0 1.0 2:1 2.3:1 2.5 700 15 14.5 1.5 2.3:1 3:1 1000 20 Unit GHz dBm dB dB V mA mA Edition 1.1 August 1999 1 FMM5017VF GaAs MMIC OUTPUT POWER vs. FREQUENCY VDD=10V VGG=-5V P1dB OUTPUT POWER vs. INPUT POWER...
Description GaAs MMIC
From old datasheet system

File Size 86.68K  /  4 Page

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    FMM5046VF

Fujitsu Microelectronics
Fujitsu Media Devices Limited
Fujitsu Component Limited.
Part No. FMM5046VF
OCR Text ... 8 10 IDS(RF) (A) 22 20 2.3 Input Power (dBm) Frequency (GHz) 2 FMM5046VF GaAs MMIC S11 S22 +j100 2.0 1.9 1.8 2.1 2.2 2.5 +j50 +j25 +90 S21 S12 +j10 0 2.3 1.9 2.0 1.7 1.8 2.5 2.6 2.1 1.7 2.7GHz 2.7GHz ...
Description From old datasheet system
GaAs MMIC

File Size 111.32K  /  4 Page

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    FMM5057VF

FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. FMM5057VF
OCR Text ...vs. FREQUENCY VDD=10V, VGG=-5V 3 2.5 INPUT OUTPUT VDD=10v,VGG=-5v 7.1GHz 7.7GHz 8.5GHz -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 15 IM3 VSWR 2 1.5 1 0.5 0 IM5 20 25 2-tone total Pout[dBm] 30 6.5 7 7.5 8 8...
Description 14 POS DUAL ROW SOCKET
7.1-8.5GHz Power Amplifier MMIC
From old datasheet system

File Size 296.99K  /  8 Page

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    FMM5061VF

Fuji Electric
Part No. FMM5061VF
OCR Text ...12 -40~+85 Limits Typ. Max. 13.3 *1 33 31*2 26 *2 24 21*1 *2 *1 ELECTRICAL CHARACTERISTICS (Case Temperature TC =25 o C) Item Frequency...5~11.7GHz *2:f=11.7~13.3GHz Min. 9.5 *1 31 29*2 24 *2 22 *1 - 15 *3:f=10MHz , -42*3 -45*3 *1 *...
Description X-Band Power Amplifier MMIC

File Size 170.74K  /  14 Page

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    MGF7176C 7176C

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. MGF7176C 7176C
OCR Text ...subject to change. MGF7176C 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER DESCRIPTION The MGF7176C is a monolith...5 5 4.5 5 Unit V V V dBm deg.C deg.C Operating case temperature -30 ~ +85 Storage temperature -30...
Description 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER
From old datasheet system

File Size 19.71K  /  2 Page

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    SLX-2143 ELECTRONICTHEATRECONTROLSINC.-SLX-2143

Electronic Theatre Controls, Inc.
SIRENZA[SIRENZA MICRODEVICES]
Stanford Microdevices
List of Unclassifed Manufacturers
Part No. SLX-2143 ELECTRONICTHEATRECONTROLSINC.-SLX-2143
OCR Text ...res * * * * * 1.7 1.9 2.1 2.3 2.5 Very Low Noise Figure, 1.05dB High OIP3 = +35dBm at 2GHz Gain = 15dB, Low Gain Slope 50 Input/Output Match, Stable Single Supply Operation, Self Biased Applications * Unit GHz dB dB dB dB dBm ...
Description 1700-2200 MHz High Linearity Low Noise Amplifier Module

File Size 158.74K  /  7 Page

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    SP8855 SP8855E

Mitel Semiconductor
MITEL[Mitel Networks Corporation]
Part No. SP8855 SP8855E
OCR Text ...nal Products IC Hanbook, HB2480-3.0 DS4239 - 3.0 March 1999 The SP8855E is one of a family of parallel load synthesisers containing all t...5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Description Input bus bit 10 Input bus bit 9 Input ...
Description 2.8GHz Parallel Load Professional Synthesiser
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test

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    TIM1011-2L

Toshiba Corporation
Toshiba Semiconductor
Part No. TIM1011-2L
OCR Text .... MAX. UNIT 600 mS -2.0 -5 -3.5 2.0 5.0 -5.0 2.6 6.0 V A V C/W The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of pat...
Description MICROWAVE POWER GaAs FET
From old datasheet system

File Size 142.06K  /  5 Page

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For 3.5-7ghz Found Datasheets File :: 736    Search Time::1.844ms    
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