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				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU2
OCR Text	...ts Amps 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Vol...312 37 127 18 16 54 5 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Ti...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	110.72K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU3
OCR Text	...ts Amps 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Vol...312 37 127 18 16 54 5 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Ti...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	111.65K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology, Ltd.
Part No.	APT5010JVR
OCR Text	...ts Amps 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Diss...312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC pF Gate-Source Charge Gate-D...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	71.26K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5010LVFR APT20M22LVFR
OCR Text	... Capacitance Total Gate Charge 3 APT5010LVFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25...312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC Gate-Source Charge Gate-Drai...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 47A 0.100 Ohm
File Size	66.12K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5010LVR
OCR Text	... Capacitance Total Gate Charge 3 APT5010LVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C ...312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC pF Gate-Source Charge Gate-D...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 47A 0.100 Ohm
File Size	64.27K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5012 APT5012WVR
OCR Text	...ts Amps 500 40 160 30 40 450 3.6 -55 to 150 300 40 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Diss...312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC pF Gate-Source Charge Gate-D...
Description	POWER MOS V 500V 40A 0.120 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.40K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5022AVR
OCR Text	...ough optimized gate layout. TO-3 * Faster Switching * Lower Leakage * 100% Avalanche Tested * Popular TO-3 Package G D S MA...312) 12.70 (.500) 5.21 (.205) 5.72 (.225) 10.67 (.420) 11.18 (.440) 25.15 (0.990) 26.67 (1.050) ...
Description	POWER MOS V 500V 21A 0.220 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.67K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024AVR
OCR Text	...ough optimized gate layout. TO-3 * Faster Switching * Lower Leakage * 100% Avalanche Tested * Popular TO-3 Package G D S MA...312) 12.70 (.500) 5.21 (.205) 5.72 (.225) 10.67 (.420) 11.18 (.440) 25.15 (0.990) 26.67 (1.050) ...
Description	POWER MOS V 500V 18.5A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.55K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5030AVR
OCR Text	...ough optimized gate layout. TO-3 * Faster Switching * Lower Leakage * 100% Avalanche Tested * Popular TO-3 Package G D S MA...312) 12.70 (.500) 5.21 (.205) 5.72 (.225) 10.67 (.420) 11.18 (.440) 25.15 (0.990) 26.67 (1.050) ...
Description	POWER MOS V 500V 14.7A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.48K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065 APT8065AVR
OCR Text	...ough optimized gate layout. TO-3 * Faster Switching * Lower Leakage * 100% Avalanche Tested * Popular TO-3 Package G D S MA...312) 12.70 (.500) 5.21 (.205) 5.72 (.225) 10.67 (.420) 11.18 (.440) 25.15 (0.990) 26.67 (1.050) ...
Description	POWER MOS V 800V 11.5A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.68K / 4 Page	View it Online	Download Datasheet

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