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20-520mhz Datasheet PDF File

For 20-520mhz Found Datasheets File :: 345 Search Time::1.437ms
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				Mitsubishi Electric Semiconductor Mitsubishi Electric Sem...
Part No.	RD00HVS111
OCR Text	...h power g ain pout > 0.5 w, gp> 20 db @vdd=12.5v,f= 175 mhz application for output stage of high power amplifiers in vhf/uhf band mobile rad...520mhz vdd=12.5v idq=50ma po gp pin-po characteristics 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5 10 15 2...
Description	RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
File Size	326.12K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor Mitsubishi Electric Semicon...
Part No.	RD01MUS211
OCR Text	...istics 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 vds(v) c i s s ( p f ) ta=+25c f=1mhz vds vs. coss characteristics 0 2 4 6 8 10 12 14 16 18 ...520mhz,1w publication date : oct 2011 3 typical characteristics vdd-po characteristics 0.0 0.5 1.0 ...
Description	RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W
File Size	414.35K / 7 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	DSS1M8837 S1M8836X01-G0T0
OCR Text	...s an 8/9/12/13 prescaler(16/17/20/21 for the s1m8837) and the if synthesizer adopts an 8/9 prescaler. phase detector gain is user-programma...520mhz(if) s1m8837: 500mhz to 2.5ghz(rf) / 45mhz to 520mhz(if) excellent in-band phase noise (...
Description	FRACTIONAL-N RF/INTEGER-N IF DUAL PLL 分数N射频/整数N如果双锁相环 PLL FREQUENCY SYNTHESIZER, 1000 MHz, CQCC24
File Size	239.25K / 29 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	RD30HUF1 RD30HUF111
OCR Text	...e to source voltage vds=0v +/ - 20 v pch channel dissipation tc=25 c 75 w pin input power zg=zl=50 ? 7.5 w id drain current - 7 a t ch chan...520mhz,30w publication date : oct 2011 2 electrical cha racteristics (tc=25 c , unless otherwise n...
Description	RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W
File Size	563.33K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	RD07MVS110
OCR Text	... to source voltage vds=0v +/- 20 v pch channel dissipation tc=25 c 50 w pin input power zg=zl=50 ? 1.5 w id drain current - 3 a ...520mhz , v dd =7.2v pin=0.7w,idq=750ma 50 55 - % load vswr tolerance v dd =9.2v,po=7w(pin co...
Description	Silicon MOSFET Power Transistor,175MHz,520MHz,7W
File Size	212.23K / 10 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	RD07MVS1B11
OCR Text	...e to source voltage vds=0v +/ - 20 v pch channel dissipation tc=25 c 50 w pin input power zg=zl=50 ? 1.5 w id drain current - 3 a t ch junc...520mhz,idq=750ma,zg=50 ? load vswr=20:1(all phase) no destroy - note: above parameters, ratings, lim...
Description	RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
File Size	415.52K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	RD07MVS1B RD07MVS1B10
OCR Text	... to source voltage vds=0v +/- 20 v pch channel dissipation tc=25 c 50 w pin input power zg=zl=50 ? 1.5 w id drain current - 3 a ...520mhz , v dd =7.2v pin=0.7w,idq=750ma 50 55 - % load vswr tolerance v dd =9.2v,po=7w(pin co...
Description	RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
File Size	205.51K / 9 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics] NEC 意法半导 STMicroelectronics N.V.
Part No.	PD54008-PD54008S XPD54008S PD54008 PD54008S XPD54008
OCR Text	...rage Temperature 0 Value 25 20 5 73 165 -65 to 165 Unit V V A W 0C 0C THERMAL DATA R th(j-c) May 2000 Junction-Case Thermal Resi...520MHz 4 8 2 6 VDD= 7.5 V IDQ =150mA VDD =7.5V IDQ= 150mA 0 0 0.5 1 1.5 2 2.5 ...
Description	RF POWER TRANSISTORS The LdmoST Plastic FAMILY RF POWER TRANSISTORS The LdmoST Plastic FAMILY 射频功率晶体管LdmoST塑料家庭
File Size	122.78K / 10 Page	View it Online	Download Datasheet

For 20-520mhz Found Datasheets File :: 345 Search Time::1.437ms
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