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  2.856 Datasheet PDF File

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    C2M0080120D

Cree, Inc
Part No. C2M0080120D
OCR Text ...screw c2m0080120d rev. a 2 electrical characteristics (t c = 25?c unless otherwise specifed) symbol parameter min. typ. max. unit ...856 h fwd = c4d10120 t j = 25 c 0 100 200 300 400 500 600 25 50 75 100 125 150 switching energy (j...
Description Silicon Carbide Power MOSFET Z-FETTM MOSFET

File Size 596.67K  /  9 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. PNZ313 PN313
OCR Text ...off resin 8.00.5 13 min. 2.30.3 2-1.20.15 2-0.60.15 0.410.15 2 1 5.080.25 Absolute Maximum Ratings Parameter Reverse vo...856 K) *2: Switching time measurement circuit Sig. in P = 800 nm 50 RL VR = 10 V (Input pulse) Sig...
Description Silicon planar type For optical control systems

File Size 75.17K  /  3 Page

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    MAXIM - Dallas Semiconductor
Part No. MAX2045EVKIT MAX2046EVKIT MAX2047EVKIT
OCR Text ...hnson 142-0741-856 Header, 10 x 2, 0.100in spacing Molex 10-89-1201 DESIGNATION L1 QTY 1 DESCRIPTION 1.5pF 0.1pF, 50V C0G ceramic capacitor (0402) Murata GRP1555C1H1R5B 8.2nH 5% chip inductor (0402) Toko LL1005-FH8N2J 280 1% resistor (0402)...
Description Evaluation Kits for the MAX2045/MAX2046/MAX2047

File Size 563.25K  /  10 Page

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    Sanyo Electric Co., Ltd.
Part No. 2SK303
OCR Text ... 3 0.16 0 to 0.1 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-...856-1/4 2SK303 No.856-2/4 2SK303 No.856-3/4 2SK303 Specifications of any and all S...
Description Low-Frequency General-Purpose Amplifier Applications N-Channel Junction Silicon FET(用于低频通用放大器N沟道结型硅场效应 低频通用放大器应用N沟道结硅场效应管(用于低频通用放大沟道结型硅场效应管)
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications

File Size 99.56K  /  4 Page

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    TMXS142

ETC[ETC]
List of Unclassifed Manufacturers
Part No. TMXS142
OCR Text 2) Operating temperature range: [-25C ; +75C] Electrical Parameters Source impedance (single ended) Load impedance (single ended) Center frequency fo Absolute attenuation 300 kHz to 856.4 MHz 856.4 MHz to 858.5 MHz 880 MHz to 883 MHz 88...
Description SAW BANDPASS FILTER 声表面波带通滤波器

File Size 253.96K  /  5 Page

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    PH2856-160

M/A-COM Technology Solutions, Inc.
Part No. PH2856-160
OCR Text 2.856 GHz, 12s Pulse, 10% Duty Features * * * * * * * * * NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold me...
Description Radar Pulsed Power Transistor 160W, 2.856 GHz, 12μs Pulse, 10% Duty
Radar Pulsed Power Transistor 160W, 2.856 GHz, 12楼矛s Pulse, 10% Duty

File Size 97.88K  /  3 Page

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    ATMEL CORP
Part No. U2801B-MFY
OCR Text ...switch ir mixer if amp 1 if amp 2 demod bb filter 3-wire bus d/a rssi latch tx driver data_hold clock data enable rx_on tx_on pu_rx/tx pu_...856 1772.928 32 2 c9 1881.792 3542.400 1771.200 32 1 112.32 c0 1897.344 3570.048 1785.024 32 9 c1 18...
Description TELECOM, CORDLESS, RF AND BASEBAND CIRCUIT, PQFP48

File Size 1,196.30K  /  24 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. PN323 PNZ323
OCR Text 2 (2.3) Not soldered 1.5 max. Unit: mm Features * Fast response which is well suited to high speed modulated light detection: tr , ...856 K) *2: Source: Infrared radiation ( = 940 nm) *3: Switching time measurement circuit Sig. in P ...
Description Silicon planar type

File Size 76.38K  /  3 Page

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