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  2.52a Datasheet PDF File

For 2.52a Found Datasheets File :: 443    Search Time::1.172ms    
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    SANYO[Sanyo Semicon Device]
Part No. FSS232
OCR Text ... 1.8max 1 4 1 : Source 2 : Source 0.2 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Ratings 30 20 9 ...52A ID=9A 10 <10s 1m 10 0m s 100s s Switching Time, SW Time - ns 3 2 100 7 5 3 2 10...
Description Load Switching Applications
N-Channel Silicon MOSFET

File Size 40.80K  /  4 Page

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    IRF5N3205

IRF[International Rectifier]
Part No. IRF5N3205
OCR Text ... 55* 220 125 1.0 20 140 55 12.5 2.7 -55 to 150 300 (for 5s) 2.6 (Typical) Units A W W/C V mJ A mJ V/ns o C g www.irf.com ...52A VDS = VGS, ID = 250A VDS =15V, IDS = 52A VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125C VGS =...
Description 55V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.008ohm, Id=55A*)
SURFACE MOUNT (SMD-1) 55V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.008ohm/ Id=55A*)

File Size 116.76K  /  7 Page

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    Matsshita / Panasonic
Part No. AN8086S
OCR Text ...ry side changed to 3.6V. 0.4 1 2 3 0.40.25 4 5 1.27 6 7 8 16 15 14 13 12 11 10 9 1.50.2 0.3 4.20.3 6.50.3 VREF 12 0.85V 0.25V +- 3.24V +- 2...52A I (Charged) =30A V = 0.58V In normal operation 8 PVCC * DC voltage input pin Operates w...
Description From old datasheet system
ICs for CD/CD-ROM Player

File Size 52.32K  /  4 Page

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    IRCZ44

IRF[International Rectifier]
Part No. IRCZ44
OCR Text ...f Sensing Cells Min. 60 --- --- 2.0 18 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 2460 --- Typ. --- 0.060 --- --- --- -...52A 27 nC VDS = 48V 46 VGS = 10V, See Fig. 6 and 13 --- VDD = 30V --- ID = 52A --- RG = 9.1 --- RD ...
Description 60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Hexfet? Power MOSFET
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50A)

File Size 131.81K  /  6 Page

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    2SK2682LS

Sanyo Semicon Device
Part No. 2SK2682LS
OCR Text ...: mm 2078C [2SK2682LS] 10.0 3.2 3.5 7.2 Low ON-resistance. High-speed diode. Micaless package facilitating mounting. 4.5 2.8 ...52A <10s 100s Drain Current, ID -- A ID=13A 1m s 10 100 7 5 3 2 tf tr td(on) ...
Description N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 30.05K  /  4 Page

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    IRLI3705N IRLI3705

IRF[International Rectifier]
Part No. IRLI3705N IRLI3705
OCR Text ...kage l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l l D VDSS = 55V G S RDS(on) = 0.01 ID = 52A Fifth Generation HEXFETs from International Rectifier utilize adv...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET

File Size 103.68K  /  8 Page

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    APT33GF120 APT33GF120BR

Advanced Power Technology
ADPOW
Part No. APT33GF120 APT33GF120BR
OCR Text ...: 0.063" from Case for 10 Sec. 2 mJ Watts STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) Gate Threshold Voltage (VC...
Description MOSFET
Fast IGBT

File Size 73.24K  /  5 Page

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    INTERSIL[Intersil Corporation]
Part No. HUF76137S3S HUF76137P3 FN4398
OCR Text ... (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100oC, VGS = 5V) . . . ...52A, VGS = 4.5V (Figure 9) 1 - 0.0075 0.010 0.011 3 0.009 0.0125 0.014 V THERMAL S...
Description 75A/ 30V/ 0.009 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs
75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
75A 30V 0.009 Ohm N-Channel Logic Level UltraFET Power MOSFETs
From old datasheet system

File Size 107.69K  /  10 Page

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    IRG4PC50KD

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PC50KD
OCR Text ...- -- -- -- Typ. -- 0.47 1.84 2.19 1.79 -- -12 24 -- -- 1.3 1.2 -- Max. Units Conditions -- V VGE = 0V, IC = 250A -- V/C VGE = 0V, IC = 1.0mA 2.2 IC = 30A VGE = 15V -- V IC = 52A see figures 2, 5 -- IC = 25A, TJ = 150C 6.0 VCE = VGE, I...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.84V, @Vge=15V, Ic=30A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.84V,@和VGE \u003d 15V的,集成电路\u003d 30A条)

File Size 363.90K  /  10 Page

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