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  2.2-2.7ghz Datasheet PDF File

For 2.2-2.7ghz Found Datasheets File :: 890    Search Time::2.782ms    
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    2SC5415

SANYO[Sanyo Semicon Device]
Part No. 2SC5415
OCR Text ...off frequency : fT=6.7GHz typ. 2 Package Dimensions unit:mm 2038A [2SC5415] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Bas...
Description NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications

File Size 45.72K  /  6 Page

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    TIM7785-16UL

TOSHIBA[Toshiba Semiconductor]
Part No. TIM7785-16UL
OCR Text ... mS 3600 V A V C/W -1.0 -5 -2.5 10.5 1.5 -4.0 14.0 1.8 Rth(c-c) Channel to Case The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any ...
Description MICROWAVE POWER GaAs FET

File Size 69.02K  /  4 Page

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    FMM5017VF

Fujitsu Component Limited.
Fujitsu Media Devices Limited
Part No. FMM5017VF
OCR Text ...Limit Typ. Max. ~ 29.0 20.0 1.0 2:1 2.3:1 2.5 700 15 14.5 1.5 2.3:1 3:1 1000 20 Unit GHz dBm dB dB V mA mA Edition 1.1 August 1999 1 FMM5017VF GaAs MMIC OUTPUT POWER vs. FREQUENCY VDD=10V VGG=-5V P1dB OUTPUT POWER vs. INPUT...
Description GaAs MMIC
From old datasheet system

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    FMM5046VF

Fujitsu Microelectronics
Fujitsu Media Devices Limited
Fujitsu Component Limited.
Part No. FMM5046VF
OCR Text ...r or output stage in the 1.7 to 2.3GHz band. The output stage is partially matched for this device. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25C) Item DC Input Voltage DC Input Voltage Input Power Storage Temperature Operating C...
Description From old datasheet system
GaAs MMIC

File Size 111.32K  /  4 Page

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    FMM5057VF

FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. FMM5057VF
OCR Text ... 23.0 VDD=10V,VGG=-5V 34.0 26.0 2.4 2:1 2:1 1100 5.0 50 4.0 2.6 : 1 1200 15.0 Unit V dBm mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25) Item Frequency Range Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Gain Flatness Inpu...
Description 14 POS DUAL ROW SOCKET
7.1-8.5GHz Power Amplifier MMIC
From old datasheet system

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    FMM5061VF

Fuji Electric
Part No. FMM5061VF
OCR Text ... Limits Typ. Max. 13.3 *1 33 31*2 26 *2 24 21*1 *2 *1 ELECTRICAL CHARACTERISTICS (Case Temperature TC =25 o C) Item Frequency Range Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency at 1dB G.C.P. Third Order Int...
Description X-Band Power Amplifier MMIC

File Size 170.74K  /  14 Page

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    SLX-2143 ELECTRONICTHEATRECONTROLSINC.-SLX-2143

Electronic Theatre Controls, Inc.
SIRENZA[SIRENZA MICRODEVICES]
Stanford Microdevices
List of Unclassifed Manufacturers
Part No. SLX-2143 ELECTRONICTHEATRECONTROLSINC.-SLX-2143
OCR Text ...e Noise Figure Noise Figure 2.00 1.75 Noise Figure (dB) 1.50 1.25 1.00 0.75 0.50 0.25 0.00 1.5 Product Features * * * * * 1.7 1.9 2.1 2.3 2.5 Very Low Noise Figure, 1.05dB High OIP3 = +35dBm at 2GHz Gain = 15dB, Low Gain Slope...
Description 1700-2200 MHz High Linearity Low Noise Amplifier Module

File Size 158.74K  /  7 Page

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    SP8855 SP8855E

Mitel Semiconductor
MITEL[Mitel Networks Corporation]
Part No. SP8855 SP8855E
OCR Text 2.8GHz Parallel Load Professional Synthesiser Advance Information Supersedes version in January 1996 Professional Products IC Hanbook, HB24...2.8GHz Operating Frequency (IG GRADE) s Single 5V Supply Operation s High Comparison Frequency 50MHz...
Description 2.8GHz Parallel Load Professional Synthesiser
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test

File Size 168.71K  /  14 Page

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    TIM1011-2L

Toshiba Corporation
Toshiba Semiconductor
Part No. TIM1011-2L
OCR Text ... MIN. TYP. MAX. UNIT 600 mS -2.0 -5 -3.5 2.0 5.0 -5.0 2.6 6.0 V A V C/W The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringeme...
Description MICROWAVE POWER GaAs FET
From old datasheet system

File Size 142.06K  /  5 Page

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    EC3H02B

Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Part No. EC3H02B
OCR Text ...unit:mm 2183 [EC3H02B] 0.35 0.2 0.15 0.05 1 0.4 0.15 2 0.05 1.0 0.65 0.25 3 0.5 0.25 0.05 0.05 (Bottom view) 0.6 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Col...
Description VHF to UHF Low-Noise Wide-Band Amplifier Applications 甚高频到超高频低噪声宽带放大器应
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications

File Size 37.44K  /  5 Page

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