1800-1990 pdf Datasheet P5 Full Text Search --- IC-ON-LINE


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1800-1990 Datasheet PDF File

For 1800-1990 Found Datasheets File :: 418 Search Time::4.469ms
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				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SC4900
OCR Text	...400 600 800 1000 1200 1400 1600 1800 2000 S11 MAG. 0.678 0.523 0.453 0.423 0.407 0.412 0.414 0.423 0.438 0.446 ANG. -67.0 -107.6 -135.8 -155...1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-8562...
Description	Silicon NPN Transistor Silicon NPN Epitaxial UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
File Size	46.34K / 8 Page	View it Online	Download Datasheet

				Anadigics Inc ANADIGICS, Inc.
Part No.	AWT6108 AWT6108M10P8
OCR Text	...2 31.0 1700 1720 1740 1760 1780 1800 1820 VBATT = 3.5V, VREG = 2.8V Temp = +25C, PW = 1154us VRAMP = 1.6V 1840 1860 1880 1900 1920 Frequency (MHz) DCS -20C PCS -20C DCS +25C PCS +25C DCS +85C PCS +85 C 8 PRELIMINARY...
Description	This quad band power amplifier module is designed to support dual, tri and quad band applications. Power Amplifiers Quad Band Power Amplifier Module 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
File Size	312.80K / 12 Page	View it Online	Download Datasheet

				ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] Anadigics Inc
Part No.	AGB3301 AGB3301S24Q1
OCR Text	...z 25 0 300 600 900 1200 1500 1800 2100 2400 2700 3000 25 -50 -25 0 25 50 75 100 Frequency (MHz) Case Temperature (oC) Figure ...1990 MHz) 0.01uF Coilcraft 1008CS series 18nH 2pF RF Input 1pF 3.9nH AGB3301 6pF VDD 4.7n...
Description	50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER Gain Block Amplifiers The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
File Size	328.40K / 16 Page	View it Online	Download Datasheet

				Motorola
Part No.	MRF18085ALSR3 MRF18085AR3 MRF18085A
OCR Text	...40 MHz 120 100 80 60 40 20 0 1800 VDD = 26 Vdc IDQ = 800 mA TC = 25_C Pin = 8 W 4W 1W 0.5 W 1000 1820 1840 1860 1880...1990 MHz Zload f = 1710 MHz f = 1990 MHz f = 1710 MHz Zsource VDD = 26 V, IDQ = 800 mA, Pou...
Description	GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
File Size	411.94K / 8 Page	View it Online	Download Datasheet

				Vishay Siliconix Vishay Telefunken
Part No.	BFR93R BFR93
OCR Text	... 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 ...1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. V...
Description	From old datasheet system Silicon NPN Planar RF Transistor
File Size	121.20K / 7 Page	View it Online	Download Datasheet

				Vishay Telefunken VISAY[Vishay Siliconix]
Part No.	S860T
OCR Text	...0 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2400 2600 2700 2800 2900 3000 Document Number 85055 Rev. 3, 20-Jan-99 ...1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. V...
Description	BIPMIC ? Cascadable Silicon Bipolar Amplifier From old datasheet system BIPMIC - Cascadable Silicon Bipolar Amplifier
File Size	66.49K / 5 Page	View it Online	Download Datasheet

				ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] Anadigics Inc
Part No.	AGB3300 AGB3300_REV_2.1 AGB3300S24Q1
OCR Text	...z 25 0 300 600 900 1200 1500 1800 2100 2400 2700 3000 25 -50 -25 0 25 50 75 100 Frequency (MHz) Temperature (oC) 16 14 Fig...1990 MHz) 0.01uF Coilcraft 0805CS series 10nH 2.7nH RF Input 3.3nH Capacitors are Murata GRM...
Description	50OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER From old datasheet system Gain Block Amplifiers The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and ...
File Size	278.09K / 16 Page	View it Online	Download Datasheet

				Philips Semiconductors NXP Semiconductors N.V.
Part No.	BLF4G20LS-110B
OCR Text	...pplications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance f = 1930 MHz to 1990 MHz; Tcase = 25 C; IDq = 650 mA; unless otherwise specified; in a class-AB production test circuit; typical values Mode of operation CW...
Description	From old datasheet system UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
File Size	100.62K / 12 Page	View it Online	Download Datasheet

				Vishay Intertechnology,Inc. Vishay Telefunken VISAY[Vishay Siliconix]
Part No.	BY269 BY268 BY2689
OCR Text	...VR IFSM IFAV Tj=Tstg Value 1600 1800 1400 1600 20 0.8 -65...+175 Unit V V V V A A C Maximum Thermal Resistance Tj = 25_C Parameter Junct...1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. V...
Description	From old datasheet system Silicon Mesa Rectifiers
File Size	37.51K / 3 Page	View it Online	Download Datasheet

For 1800-1990 Found Datasheets File :: 418 Search Time::4.469ms
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