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  17m Datasheet PDF File

For 17m Found Datasheets File :: 244    Search Time::1.359ms    
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    FS70SMJ-2

Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. FS70SMJ-2
OCR Text .................................. 17m ID ......................................................................................... 70A Integrated Fast Recovery Diode (TYP.) ........... 115ns q q GATE w DRAIN e SOURCE r DRAIN e TO-3P ...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 45.45K  /  4 Page

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    HA7210IBZ HA7210IBZ96 HA721005 HA7210IP HA7210 HA7210IB HA7210-05

INTERSIL[Intersil Corporation]
Part No. HA7210IBZ HA7210IBZ96 HA721005 HA7210IP HA7210 HA7210IB HA7210-05
OCR Text ... pin 2. Nominal value for RF is 17m in the lowest frequency range to 7M in the highest frequency range. The HA7210 optimizes its power for 4 frequency ranges selected by digital inputs Freq1 and Freq2 as shown in the Block Diagram. Internal...
Description 10kHz to 10MHz, Low Power Crystal Oscillator

File Size 308.81K  /  15 Page

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    AP40N03GS

Advanced Power Electronics Corp.
Part No. AP40N03GS
OCR Text ... BVDSS RDS(ON) ID TO-263 30V 17m 40A Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 79.83K  /  6 Page

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    Maxim
Part No. MAX8537EVKIT
OCR Text ...A MOSFET, n-channel, 30V, 8.3A, 17m, SO-8 International Rectifier IRF7807V Not installed, SO8 MOSFETs, n-channel, 30V, 13.6A, 9.5m, SO-8 International Rectifier IRF7821 MOSFETs, n-channel, 30V, 20A, 4.8m, SO-8 International Rectifier IRF783...
Description Evaluation Kit for the MAX7450, MAX7451
From old datasheet system

File Size 219.48K  /  11 Page

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    http://
SIPEX[Sipex Corporation]
Part No. SPX4040M-2.5_TR SPX4040N-2.5 SPX4040N-2.5_TR SPX4040AM-2.5 SPX4040AM-2.5_TR SPX4040AS-2.5 SPX4040AS-2.5_TR SPX4040M-2.5 SPX4040S-2.5 SPX4040S-2.5_TR SPX4040_05 SPX4040 SPX4040AN-2.5 SPX4040AN-2.5_TR SPX4040AN-2.5/TR SPX4040AS-2.5/TR SPX4040M-2.5/TR SPX4040S-2.5/TR SPX4040AM-2.5/TR SPX4040N-2.5/TR
OCR Text ... IQ SPX4040 SPX4040-2.5 1.17m IQ 2A standby current Figure 11. SPX4040 Fixed Shunt Regulator Application Figure 12. Micropower 10V Reference 30V * IOUT = 5.0V R2 SPX4040-2.5 3.0V 3k R1 100k C1 150pF 2 - 7 6 ...
Description Precision Micropower 2.5V ShuntVoltage Reference

File Size 92.14K  /  9 Page

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    FDS8858CZ

Fairchild Semiconductor
Part No. FDS8858CZ
OCR Text ...es Q1: N-Channel Max rDS(on) = 17m at VGS = 10V, ID = 8.6A Max rDS(on) = 20m at VGS = 4.5V, ID = 7.3A Q2: P-Channel Max rDS(on) = 20.5m at VGS = -10V, ID = -7.3A Max rDS(on) = 34.5m at VGS = -4.5V, ID = -5.6A High power and handing capabil...
Description Dual N & P-Channel PowerTrench? MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
Dual N & P-Channel PowerTrench㈢ MOSFET N-Channel: 30V, 8.6A, 17.0mヘ P-Channel: -30V, -7.3A, 20.5mヘ

File Size 301.29K  /  10 Page

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    CEB50N06 CEP50N06

CET
Chino-Excel Technology
Part No. CEB50N06 CEP50N06
OCR Text 17m (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP50N06/CEB50N06 D D G G D S S CEB SERIES TO-2...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 383.75K  /  4 Page

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    FDMC8878

Fairchild Semiconductor
Part No. FDMC8878
OCR Text ... = 10V, ID = 9.6A Max rDS(on) = 17m at VGS = 4.5V, ID = 8.7A Low Profile - 1mm max in Power 33 RoHS Compliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor`s advanced Power Trench process. It has been op...
Description N-Channel Power Trench MOSFET 30V, 16.5A, 14mohm

File Size 395.92K  /  7 Page

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    AO4912 AO4912L

Alpha & Omega Semiconductors
Part No. AO4912 AO4912L
OCR Text ...S (V) = 30V ID = 8.5A RDS(ON) < 17m RDS(ON) < 25m Q2 VDS(V) = 30V ID=7A (VGS = 10V) <26m (VGS = 10V) <31m (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K K D2...
Description Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 145.76K  /  8 Page

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