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  13-16ghz Datasheet PDF File

For 13-16ghz Found Datasheets File :: 107    Search Time::3.312ms    
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    FMA30141

Filtronic Compound Semiconductors
Part No. FMA30141
OCR Text ...GHz 12.7-16GHz MIN 28 -8 -8 13 TYP 32 -15 -12 15 MAX UNITS dB dB dB dBm Note: TAMBIENT = +25C, Z0 = 50 1 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Em...
Description 12.7-16GHZ MMIC LIMITING AMPLIFIER

File Size 185.97K  /  6 Page

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    CHA2066-99F_00 CHA2066 CHA206604 CHA2066-99F/00

United Monolithic Semic...
United Monolithic Semiconductors
Part No. CHA2066-99F_00 CHA2066 CHA206604 CHA2066-99F/00
OCR Text ... 12 10 8 6 4 2 0 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Frequency ( GHz ) 0 1 2 3 4 | Broad band performance 10-16GHz | 2.0dB noise figure, 10-16GHz | 16dB gain, 0.5dB gain flatness | Low DC power consumption, 50mA | 20dBm 3rd order int...
Description 10-16GHz Low Noise Amplifier

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    CHA6664-QDG

United Monolithic Semiconductors
Part No. CHA6664-QDG
OCR Text ...25 -30 -35 -40 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Frequency (GHz) dB(S21) dB(S11) dB(S22) Typical on board measurement...16GHz High Power Amplifier Tamb = +25 Vd1=Vd2=Vd3=+8V, Id (Quiescent)=600mA , CW biasing mode C, ...
Description 12-16GHz 1W High Power Amplifier

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    CHA3512-99F_00 CHA351208 CHA3512-99F/00

United Monolithic Semiconductors
Part No. CHA3512-99F_00 CHA351208 CHA3512-99F/00
OCR Text ...Unit GHz 16 14 10 19 -25 16 13 20 -35 22 dB dB dB ATT dyn Is Attenuator range Isolation @ Attenuator state 0dB & switch OFF (1) Output power at 1dB compression @ Attenuator state 0dB (1) Saturated Output power @ Attenuator state 0...
Description 6-18GHz Low Noise Digital Variable Amplifier

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    MCH4020

Sanyo Semicon Device
Part No. MCH4020
OCR Text ...1GHz VCE=1V, IC=10mA, f=1GHz 60 13 16 17.5 1.2 1.8 Conditions Ratings min typ max 1.0 1.0 150 GHz dB dB Unit A A Marking : GT Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequen...
Description NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifi er

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    MCH4021

Sanyo Semicon Device
Part No. MCH4021
OCR Text ...1GHz VCE=1V, IC=10mA, f=1GHz 60 13 16 17.5 1.2 1.8 Conditions Ratings min typ max 1.0 1.0 150 GHz dB dB Unit A A Marking : GL Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequen...
Description NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier

File Size 268.84K  /  9 Page

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    CHA4664-QGG

United Monolithic Semiconductors
Part No. CHA4664-QGG
OCR Text ... 4 2 0 -2 -4 5 6 7 8 9 10 11 12 13 14 15 16 17 Gc=0.6V Frequency (GHz) Main Characteristics Tamb. = 25 Vd = 4.5V C, Symbol Fop G G...16GHz Variable Gain Amplifier Tamb. = 25 Vd = 4.5V, Gc= Gc1 = Gc2 = Gc3, CW bi asing mode. C, The...
Description 5.5-16GHz Variable Gain Amplifier

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    CHA5051-QDG

United Monolithic Semiconductors
Part No. CHA5051-QDG
OCR Text ...Output IP3 from 7 to 12GHz from 13 to 16 GHz Vd Id DC voltage Bias current dBm V mA Absolute Maximum Ratings Tamb.=25 (1) C Symbol...16GHz Medium Power Amplifier Typical Measured Performance CHA5051-QDG On board measurement Ta...
Description 7-16GHz Medium Power Amplifier

File Size 639.65K  /  10 Page

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    CHA5051

United Monolithic Semiconductors
Part No. CHA5051
OCR Text ...,0 -10,5 -72 27,3 2 -60,1 -155 -13,8 -140 10,0 -10,9 -92 26,7 -60 -53,2 -84 -17,4 -161 11,0 -9,5 -113 26,5 -116 -47,5 -113 -18,6 -174 12,0 -...16GHz Medium Power Amplifier Typical Measured Performance in test fixture Vd1=+4.5V, Id=310mA ...
Description 7-16GHz Medium Power Amplifier

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    CHA5052-QGG

United Monolithic Semiconductors
Part No. CHA5052-QGG
OCR Text ... 10 11 12 Frequency (GHz) 13 14 15 16 Typical on board measurements Main Characteristics Tamb. = 25 Vd = 5V C, Symbol ...16GHz High Power Amplifier Tamb=25 Vd = 5V and Id = 700mA, CW biasing mode. C, These values are r...
Description 7-16GHz High Power Amplifier

File Size 1,174.11K  /  10 Page

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