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  128ms Datasheet PDF File

For 128ms Found Datasheets File :: 320    Search Time::2.078ms    
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    Mitsubishi Electric Corporation
Part No. M5M465165DJ-6S M5M465405DJ-6S M5M465805DJ-6S M5M467405DJ-6S M5M467805DJ-6S M5M465165DJ-5 M5M465165DJ-5S M5M465405DJ-5S M5M465805DJ-5S M5M467405DJ-5S M5M467805DJ-5S M5M465805DTP-5S M5M467405DTP-5S M5M467805DTP-5S M5M465165DTP-6S M5M465165DTP-5S M5M465405DTP-5S M5M465405DTP-6S M5M465805DTP-6S M5M467405DTP-6S M5M467805DTP-6S
OCR Text ...y Ref,Normal R/W 8192/64ms 8192/128ms M5M467405Dxx A0-A12 M5M465405Dxx A0-A11 M5M467805Dxx A0-A12 M5M465805Dxx A0-A11 M5M465165Dxx A0-A11 A0-A10 CBR Ref,Hidden Ref 4096/64ms 4096/128ms A0-A11 RAS Only Ref,Normal R/W 4096/64ms 4...
Description EDO MODE 67108864-BIT DYNAMIC RAM
EDO MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM

File Size 287.47K  /  39 Page

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    K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4E640812E-TC/L K4E660812E-TL45

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4E640812E-TC/L K4E660812E-TL45
OCR Text ... Refresh time Normal 64ms L-ver 128ms RAS CAS W Control Clocks VBB Generator Vcc Vss * Early Write or output enable controlled write * JEDEC Standard pinout * Available in Plastic SOJ and TSOP(II) packages * +3.3V 0.3V power supply 4K 4...
Description 8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out

File Size 194.12K  /  21 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K4F641612D K4F641612D-TI K4F641612D-TP K4F661612D-TP K4F661612D K4F661612D-TI
OCR Text ... Refresh time Normal 64ms L-ver 128ms RAS UCAS LCAS W Control Clocks Vcc Vss FUNCTIONAL BLOCK DIAGRAM VBB Generator Refresh Control Refresh Counter Memory Array 4,194,304 x 16 Cells Sens e Am ps & I/O * Access mode & RAS onl...
Description 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

File Size 380.96K  /  35 Page

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    http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4E661612C-TC K4E641612C-TC50 K4E641612C-TC60 K4E641612C-TC45 K4E661612C-TC45 K4E661612C-TC60 K4E661612C-TC50 K4E641612C-T60 K4E661612C-T60 K4E661612C-45 K4E641612C-45 K4E661612C-L45 K4E661612C-60 K4E661612C-L50 K4E641612C-60 K4E641612C-50 K4E661612C-50 K4E661612C-L60 K4E641612C-TL60 K4E641612C-T50 K4E661612C-T50 K4E641612C-TL50 K4E641612C-T45 K4E641612C-TL45
OCR Text ... Refresh time Normal 64ms L-ver 128ms RAS UCAS LCAS W Control Clocks Vcc Vss Lower Data in Buffer Sense Amps & I/O Lower Data out Buffer Upper Data in Buffer Upper Data out Buffer FUNCTIONAL BLOCK DIAGRAM VBB Generator * Access mo...
Description CABLE ASSEMBLY; SMA MALE TO SMA FEMALE BULKHEAD; 50 OHM, RG58C/U COAX; 36" CABLE LENGTH;
4M x 16bit CMOS Dynamic RAM with Extended Data Out 4米16位的CMOS动态随机存储器的扩展数据输

File Size 890.21K  /  36 Page

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