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Macronix 旺宏
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| Part No. |
MX23L12822 23L12822
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| OCR Text |
128M-BIT MASK ROM (16/32 BIT OUTPUT)
FEATURES
* Bit organization - 8M x 16 (byte mode) - 4M x 32 (double word mode) * Fast access time (for VCC=3.3V5%) - Random access: 100ns (max.) - Page access: 30ns (max.) * Fast access time (for VCC... |
| Description |
128M-BIT MASK ROM (16/32 BIT OUTPUT)
From old datasheet system
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| File Size |
42.70K /
6 Page |
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Atmel Corp
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| Part No. |
SAM9708NBSP SAM9708
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| OCR Text |
...ss (ROM/SRAM/DRAM/SDRAM), up to 128M words (256M bytes). DRAM/SDRAM addresses are time-multiplexed on these pins as follows: WA0 - WA8: DRA0...Word (2 x bytes) read cycle time Chip select low/address valid to WOE low Output enable pulse width ... |
| Description |
128-voice Integrated Sound Synthesizer
From old datasheet system
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| File Size |
177.24K /
29 Page |
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it Online |
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Samsung
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| Part No. |
K9F2808U0C
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| OCR Text |
... or 8Mx16bit, the K9F28XXU0C is 128M bit with spare 4M bit capacity. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost...word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device... |
| Description |
IC,EEPROM,NAND FLASH,16MX8,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system
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| File Size |
317.17K /
32 Page |
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it Online |
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Samsung
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| Part No. |
K9F1G08U0M
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| OCR Text |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. Iol(R/B) of 1.8V is ch...Word - Block Erase -X8 device(K9F1G08X0M): (128K + 4K)Byte -X16 device(K9F1G16X0M): (64K + 2K)Word *... |
| Description |
IC,EEPROM,NAND FLASH,128MX8,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system
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| File Size |
475.80K /
39 Page |
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it Online |
Download Datasheet |
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Price and Availability
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