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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HGTG12N60C3D
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| OCR Text |
...
400 TJ = 150oC, RG = 25, L = 100mh, VCE(PK) = 480V 300 VGE = 15V
50
30
VGE = 10V
VGE = 10V 200
20
VGE = 15V
10 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTER CURRENT (A)
100 5 10 15 20 25 30 ICE , COLLECTOR TO EMITTE... |
| Description |
From old datasheet system
24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
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| File Size |
123.26K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTG20N60B3D FN3739
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| OCR Text |
... = 75oC, VGE = 15V RG = 10, L = 100mh VCE = 480V 100 fMAX1 = 0.05/(td(OFF)I + td(ON)I) fMAX2 = (PD - PC)/(EON +EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 0.76oC/W 5 10 20 30 40
(Continued)
ICE... |
| Description |
40A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system
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| File Size |
134.08K /
6 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
IRFM210A
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| OCR Text |
...um Junction Temperature O 2 O L=100mh, I AS=0.77A, V DD=50V, RG=27, Starting T J =25 oC 3 _ _ _ O ISD <3.3A, di/dt < 140A/ s, VDD <BVDSS , Starting T J =25 oC _ 4 O Pulse Test : Pulse Width = 250 s, Duty Cycle <2% 5 Essentially Independent ... |
| Description |
Advanced Power MOSFET (200V, 1.5ohm, 0.77A)
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| File Size |
264.79K /
7 Page |
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it Online |
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SUMIDA CORPORATION.
SUMIDA[Sumida Corporation]
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| Part No. |
MG56
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| OCR Text |
....0mm Max. Height. *E Inductance:100mh Max. *E Operating frequency:500kHz Max. *E In addition to the reference versions of parameters shown here, custom designs are available to meet your exact requirements
*Y
Feature
*E *E
*Y
Magne... |
| Description |
IFT COILS , Pin Type: MG Series
Filter - Wireless Data
IFT COILS < Pin Type: MG Series>
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| File Size |
28.75K /
1 Page |
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it Online |
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NTE Electronics, Inc.
NTE[NTE Electronics]
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| Part No. |
NTE2080
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| OCR Text |
... . . . . . . . . . . . . . . . 100mh
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Output Voltage Symbol VOUT Test Conditions VIN = 8V, VCC = 6V, IOUT = 100mA IIN = 300A, VCC = 6V, IOUT = 100mA IIN = 300A... |
| Description |
Integrated Circuit 7-Stage Driver Array
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| File Size |
22.65K /
2 Page |
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it Online |
Download Datasheet |
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NTE[NTE Electronics]
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| Part No. |
NTE2081
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| OCR Text |
... . . . . . . . . . . . . . . . 100mh
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Output Voltage Symbol VOUT Test Conditions VIN = 3V, VCC = 6V, IOUT = 100mA VIN = 3V, VCC = 8V, IOUT = 150mA IIN = 0.2mA,... |
| Description |
Integrated Circuit 7-Stage Driver Array
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| File Size |
22.03K /
2 Page |
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it Online |
Download Datasheet |
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NTE[NTE Electronics]
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| Part No. |
NTE2332
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| OCR Text |
... Fall Time Es/b ton tstg tf L = 100mh, RBE = 100 VCC = 20V, IC = 1A IB1 = -IB2 = 4mA IB1 = -IB2 = 4mA
.420 (10.67) Max .110 (2.79) C B .147 (3.75) Dia Max .500 (12.7) Max
E .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.... |
| Description |
Darlington Silicon NPN Transistor w/ Internal Damper & Zener Diode
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| File Size |
22.76K /
2 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE2334
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| OCR Text |
...mA, IE = 0 Es/b ton tstg tf L = 100mh, RBE = 100 VCC = 20V, IC = 3A, IB1 = -IB2 = 6mA
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE =
.420 (10.67) Max
.110 (2.79)
C B
.147 (3.75) Dia Max
.500 (12.7) Max
E... |
| Description |
Silicon NPN Transistor Darlington Driver w/Internal Damper and Zener Diode
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| File Size |
22.92K /
2 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE2336
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| OCR Text |
...l ton tstg tf Es/b IC = 1A, L = 100mh, RBE = 100 Test Conditions VCC = 50V, IC = 4A, IB1 = 8mA, IB2 = -8mA Min - - - 50 Typ 0.5 4 1 - Max - - - - Unit s s s mJ
C B
E
.402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17... |
| Description |
Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode
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| File Size |
22.47K /
2 Page |
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it Online |
Download Datasheet |
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NTE[NTE Electronics]
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| Part No. |
NTE2340
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| OCR Text |
...T ton tstg tf Es/b IC = 1A, L = 100mh, RBE = 100 Test Conditions VCB = 50V, IE = 0 VEB = 7V, IC = 0 VCE = 3V, IC = 4A VCE = 3V, IC = 8A IC = 4A, IB = 8mA VCE = 10V, IC = 0.5A, f = 1MHz VCC = 50V, IB1 = -IB2 = 8mA, IC = 4A Min - - 50 2000 50... |
| Description |
Silicon NPN Transistor Darlington Power Amp, Switch
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| File Size |
21.84K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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