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  100 110 120v Datasheet PDF File

For 100 110 120v Found Datasheets File :: 747    Search Time::1.797ms    
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    SMJE-2V08W1P313

Seoul Semiconductor
Part No. SMJE-2V08W1P313
OCR Text ...orage temperature t stg - 40 ~ 100 oc esd sensitivity - 4,000v hbm - * notes : [1] at 120v rms, ta=25oc [2] acrich 2 series maintain the...110 120 130 140 150 160 0.00 0.20 0.40 0.60 0.80 1.00 1 . 20 1.40 1 . 60 100 110 120 130 1...
Description Acrich2 - 120v 8.5W Bulb Connects directly to AC line voltage

File Size 656.38K  /  21 Page

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    TS862C12R

Fuji Electric
Part No. TS862C12R
OCR Text ...0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 V F Forward Voltage (V) V R Reverse Voltage (V) Forward Power Dissipation (max.) 8 Io Reverse Power Dissipation (max.) 4 360 W F Forward Power Dissipation (W) P R Rev...
Description High Voltage Schottky barrier diode

File Size 50.35K  /  3 Page

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    IRFR6215TRL IRFR6215PBF IRFR6215TRR IRFU6215

International Rectifier
Part No. IRFR6215TRL IRFR6215PBF IRFR6215TRR IRFU6215
OCR Text ...-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v q g total gate charge CCC CCC 66 i d = -6.6a q gs gate-to-source charge CCC CCC 8.1 nc v ds = -120v q gd gate-to-drain ("miller") ...
Description -150V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-150V Single P-Channel HEXFET Power MOSFET in a I-Pak package

File Size 148.75K  /  10 Page

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    IRFR18N15DPBF IRFR18N15D

International Rectifier
Part No. IRFR18N15DPBF IRFR18N15D
OCR Text ...-source forward leakage CCC CCC 100 v gs = 30v gate-to-source reverse leakage CCC CCC -100 na v gs = -30v i gss i dss drain-to-source leak...110 thermal resistance irfr18n15d/irfu18n15d www.irf.com 3 fig 4. normalized on-resistance vs. t...
Description (IRFR18N15D / IRFU18N15D) SMPS MOSFET
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package

File Size 134.27K  /  10 Page

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    FDPF190N15A

Fairchild Semiconductor
Part No. FDPF190N15A
OCR Text ... c) 27.4 a - continuous (t c = 100 o c) 17.4 i dm drain current - pulsed (note 1) 110 a e as single pulsed avalanche energy (no...
Description N-Channel PowerTrench? MOSFET 150V, 27.4A, 19mΩ

File Size 222.91K  /  9 Page

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    SMJE-2V08W1P3

Seoul Semiconductor
Part No. SMJE-2V08W1P3
OCR Text ...orage temperature t stg - 40 ~ 100 oc esd sensitivity - 4,000v hbm - * notes : [1] at 120v rms, ta=25oc [2] acrich 2 series maintain the...110 120 130 140 150 160 relative power distribution voltage[v] relative power distribution vs. vol...
Description Acrich2 series designed for AC drive(or operation)...

File Size 658.77K  /  17 Page

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    PH868C12

FUJI ELECTRIC CO LTD
Fuji Electric Holdings Co., Ltd.
Part No. PH868C12
OCR Text ...0 50 60 70 80 90 100 110 120 130 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation (max.) 8 22 Io Reverse Power Dissipation (max.) DC 360 (W) 18 360 (W) 20 ...
Description High Voltage Schottky barrier diode 30 A, 120 V, SILICON, RECTIFIER DIODE, TO-247

File Size 62.62K  /  3 Page

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    SMJE-2V12W1P3

List of Unclassifed Manufacturers
Part No. SMJE-2V12W1P3
OCR Text ...orage temperature t stg - 40 ~ 100 oc esd sensitivity - 4,000v hbm - * notes : [ 1 ] at 120 v rms, ta= 25 oc [ 2 ] acrich 2 series ma...110 120 130 140 150 160 relative power distribution voltage[v] relative power distribution vs. vol...
Description Arich 2 series designed for...

File Size 620.01K  /  17 Page

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    AP13P15GH AP13P15GJ

Advanced Power Electronics Corp.
Part No. AP13P15GH AP13P15GJ
OCR Text ... Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ ...110 Units /W /W Data and specifications subject to change without notice 200810051-1/4 AP13...
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 71.60K  /  4 Page

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