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  10 2010 Datasheet PDF File

For 10 2010 Found Datasheets File :: 37955    Search Time::2.625ms    
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    KST3906-10

Fairchild Semiconductor
Part No. KST3906-10
OCR Text ...r-base breakdown voltage i c = -10 a, i e =0 -40 v bv ceo * collector-emitter breakdown voltage i c = -1.0ma, i b =0 -40 v bv ebo emitter-b...2010 fairchild semiconductor corporation www.fairchildsemi.com kst3906 rev. a3 2 typical performa...
Description PNP Epitaxial Silicon Transistor

File Size 104.85K  /  4 Page

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    R-78B6.5-1.0 R-78B1.5-1.0 R-78B12-1.0 R-78B15-1.0 R-78B5.0-1.0 R-78B9.0-1.0 R-78B-1.0 R-78B1.8-1.0 R-78B2.5-1.0

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Recom International Power
Part No. R-78B6.5-1.0 R-78B1.5-1.0 R-78B12-1.0 R-78B15-1.0 R-78B5.0-1.0 R-78B9.0-1.0 R-78B-1.0 R-78B1.8-1.0 R-78B2.5-1.0
OCR Text ... Class B Class B Class A 6584 x 10 hours 1139 x 10 hours 330kHz 5mA 150mA 2% 0.2% 0.1% 0.4% 0.25% 100mV 1.0ms 15mVp-p 25mVp-p 3% 0.4% 0.2% 0...2010 www.recom-electronic.com INNOLINE DC/DC-Converter Characteristics R-78Bxx-1.0 (L) Se...
Description 1.0 AMP SIP3 Single Output

File Size 122.08K  /  4 Page

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    SEMIX703GAL126HDS-10

Semikron International
Part No. SEMIX703GAL126HDS-10
OCR Text ... v v ces 1200 v t j = 125 c 10 s t j -40 ... 150 c inverse diode i f t j = 150 c t c =25c 561 a t c =80c 384 a i fnom 450 a i frm i frm ...2010 ? by semikron t d(on) v cc = 600 v i c =450a r g on =1.6 ? r g off =1.6 ? t j = 125 c 310 n s t...
Description Trench IGBT Modules

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    Wisdom technologies Int...
Part No. WFF4N60-10
OCR Text ...rent vds=600v, vgs=0v -- -- 10 a vds=480v, tc=125 100 a igssf gate-body leakage current, forward vgs=+30v, vds=0v -- -- ...2010 ? | ? 3 ? ? typical characteristics 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 n...
Description 600V N-Channel MOSFET

File Size 1,435.65K  /  6 Page

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    Z0K181-RA-10 Z0M600-RA-10 Z0M100-RE-10 Z0K121-RB-10 Z0M470-RB-10 Z0M220-RC-10 Z0M300-RC-10

Superworld Electronics
Part No. Z0K181-RA-10 Z0M600-RA-10 Z0M100-RE-10 Z0K121-RB-10 Z0M470-RB-10 Z0M220-RC-10 Z0M300-RC-10
OCR Text 10 : RoHS Compliant 11 ~ 99 : Internal controlled number Z0K121-RB-10 (a) (c) (d) (b) (e) (f) (g) (a) Series code (b) Dimension code ...2010 SUPERWORLD ELECTRONICS (S) PTE LTD PG. 1 FERRITE CHIP BEADS 6. ELECTRICAL CHARACTERIST...
Description FERRITE CHIP BEADS

File Size 360.40K  /  9 Page

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    AP7217-10

Diodes Incorporated
Part No. AP7217-10
OCR Text 10 www.diodes.com april 2010 ? diodes incorporated description the ap7217 low-dropout linear regulator operates from a 3.3v to 5.5v supply and delivers a guaranteed 500ma (min) continuous load current. the high-accuracy out...
Description 500mA CMOS LDO

File Size 224.17K  /  10 Page

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    BFR182W-10

Infineon Technologies AG
Part No. BFR182W-10
OCR Text ... - - 50 dc current gain i c = 10 ma, v ce = 8 v, pulse measured h fe 70 100 140 - 2010-04-06 3 bfr182w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristi...
Description NPN Silicon RF Transistor

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    ISL8012-10

Intersil Corporation
Part No. ISL8012-10
OCR Text ...red in a space saving 3mmx3mm 10 ld dfn package lead free package with exposed pad lead frames for low thermal. the complete converter o...2010. all rights reserved all other trademarks mentioned are the property of their respective owners...
Description 2A Low Quiescent Current 1MHz High Efficiency Synchronous Buck Regulator

File Size 1,362.42K  /  16 Page

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    Wisdom technologies Int...
Part No. WFF2N60-10
OCR Text ...- 1 a vds=480v, tc=125 10 a igssf gate-body leakage current, forward vgs=+30v, vds=0v -- -- 100 na ? igssr gate-body lea...2010 ? | ? 3 ? ? typical characteristics 10 -1 10 0 10 1 10 -2 10 -1 10 0 ...
Description 600V N-Channel MOSFET

File Size 1,498.59K  /  6 Page

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