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FUJI[Fuji Electric]
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| Part No. |
2SK3593-01
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| OCR Text |
...10 24 20 26 50 20 52 15 18 1.10 0.14 0.77
Min.
150 3.0
Typ.
Max.
5.0 25 250 100 41 2910 465 36 30 39 75 30 78 22.5 27 1.65
Uni...57A
40
6.5V 6.0V VGS=5.5V
0 0 25 50 75 100 125 150
0 0 2 4 6 8 10 12
starting Tch [C]... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
101.84K /
4 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AOU436
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| OCR Text |
...C Repetitive avalanche energy L=0.1mH C Power Dissipation B TC=25C TC=100C TC=25C TC=100C
B
Maximum 30 20 57 40 100 30 143 50 25 -55 to 175
Units V V A A mJ W C
ID IDM IAR EAR PD TJ, TSTG
Junction and Storage Temperature Range ... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
66.23K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M75LFLL APT50M75B2FLL
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| OCR Text |
0.075W
POWER MOS 7TM
FREDFET
B2FLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power...57A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Te... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
53.93K /
2 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M75LFLL APT50M75B2FLL APT50M75B2FLL_04 APT50M75B2FLL04
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| OCR Text |
0.075
B2FLL
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both c...57A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 57A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = ... |
| Description |
POWER MOS 7 FREDFET
POWER MOS 7 R FREDFET
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| File Size |
163.79K /
5 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M75LLL APT50M75B2LL
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| OCR Text |
0.075W
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduct...57A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Te... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
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| File Size |
55.87K /
2 Page |
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it Online |
Download Datasheet |
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Microsemi, Corp.
ADPOW[Advanced Power Technology]
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| Part No. |
APT50M75LLL APT50M75B2LL APT50M75B2LL_04 APT50M75B2LL04 APT50M75B2LLG
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| OCR Text |
0.075
B2LL
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both con...57A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 57A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2... |
| Description |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS 7 R MOSFET
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| File Size |
162.79K /
5 Page |
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it Online |
Download Datasheet |
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Rohm CO.,LTD.
ROHM[Rohm]
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| Part No. |
BP5035A5
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| OCR Text |
...AX. Mark Side
17.9MAX.
41.0
1
3
5 0 . 5 0 . 1
7
10 0 . 2 5 0 . 0 5
1 . 3 0 . 2 4.25MAX. 4.85MAX.
3.25MAX
P = 5...57A above. Otherwise heating or abnormal oscilation occurs. 1022 1/4W Reduce the noise terminal volt... |
| Description |
AC100V input, −5V/200mA output
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| File Size |
35.37K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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