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  0.38a Datasheet PDF File

For 0.38a Found Datasheets File :: 434    Search Time::1.172ms    
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    Microsemi, Corp.
ADPOW[Advanced Power Technology]
Part No. APT10026L2FLL_03 APT10026L2FLL APT10026L2FLL03
OCR Text 0.260 POWER MOS 7 (R) R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement m...38A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 38A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2...
Description 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 101.61K  /  5 Page

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    IRF[International Rectifier]
Part No. IRFPS38N60 IRFPS38N60L
OCR Text ... Typ. Max. Units 600 --- --- 3.0 --- --- --- --- --- --- 0.41 120 --- --- --- --- --- 1.2 --- --- 150 5.0 50 2.0 100 -100 --- V m V A mA n...38A Conditions VDS = 50V, ID = 23A VDS = 480V VGS = 10V, See Fig. 7 & 15 VDD = 300V ID = 38A RG ...
Description 600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
SMPS MOSFET

File Size 163.43K  /  9 Page

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    Advanced Power Technology, Ltd.
Microsemi, Corp.
ADPOW[Advanced Power Technology]
Part No. APT10026JLL_03 APT10026JLL APT10026JLL03
OCR Text 0.260 POWER MOS 7 (R) R MOSFET G S D S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement ...38A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 38A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2...
Description 30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 107.27K  /  5 Page

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    Microsemi, Corp.
ADPOW[Advanced Power Technology]
Part No. APT10026JFLL_03 APT10026JFLL APT10026JFLL03
OCR Text 0.260 POWER MOS 7 (R) R FREDFET G S D S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement...38A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 38A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2...
Description 30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 107.67K  /  5 Page

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    FCH041N60F

Fairchild Semiconductor
Part No. FCH041N60F
OCR Text ...esistance, junction to case 0.21 o c/w r ja thermal resistance, junction to ambient 40 fch041n60f ...38a - 36 41 m g fs forward transconductance v ds = 20v, i d = 38a (note 4) - ...
Description N-Channel SuperFETII FRFETMOSFET 600V, 76A, 41m
600V N-Channel MOSFET, FRFET

File Size 324.15K  /  9 Page

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    THBT15011 THBT27011DRL THBT27011 THBT20011DRL THBT15011D THBT15011DRL THBT16011D THBT20011D THBT27011D THBTXXX11D 3767 -

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
Part No. THBT15011 THBT27011DRL THBT27011 THBT20011DRL THBT15011D THBT15011DRL THBT16011D THBT20011D THBT27011D THBTXXX11D 3767 -THBT15011D
OCR Text ...0s 10/700s 5/310s 1.2/50s 1/20s 0.5/700s 0.2/310s 2/10s 2/10s 2/10s 2/10s 1.5kV 20A (*) 2kV 20A (*) 1.5kV 20A (*) 1.5kV 20A (*) 2.5kV 40A...38A IPP=30A IPP=30A IPP=38A IPP=30A IPP=30A IPP=38A IPP=30A IPP=30A IPP=38A Maximum 240 250 260 260 ...
Description Tripolar Overvoltage Protection for Telecom Line(?ㄤ??典俊绾跨?涓??杩??淇??)
TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE - (ASD)
TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE - (ASD)
From old datasheet system

File Size 70.45K  /  9 Page

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    CHM65A3PAPT

Chenmko Enterprise Co. Ltd.
Part No. CHM65A3PAPT
OCR Text ... .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) * N-Channel Enhancement (1) (3) (2) .417 (10.6) .346 (8.80) CONSTRUCTION ...38A VGS=4.5V, ID=24A 1 10 15 3 13 V m 20 Dynamic Characteristics Ciss Coss Crss Input...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 461.88K  /  3 Page

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    FCA76N60N

Fairchild Semiconductor
Part No. FCA76N60N
OCR Text ...e, junction to case 0.23 o c/w r js thermal resistance, case to heat sink (typical) 0.24 r ja thermal resistance, junction to ...38a - 28 36 m g fs forward transconductance v ds = 40v, i d = 38a - 88 - s c ...
Description FCA76N60N N-Channel MOSFET 600V, 76A, 36mΩ

File Size 705.76K  /  8 Page

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    MICROSEMI POWER PRODUCTS GROUP
Part No. APT8020B2FLLG
OCR Text ...t8020b2fll apt8020lfll 800v 38a 0.220 ? ? ? ? ? ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? popular t-max? or to-264 package ? fast recovery body diode pow...
Description 38 A, 800 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 245.11K  /  5 Page

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    SENSITRON SEMICONDUCTOR
Part No. SHD218502 SHD218502A SHD218502B
OCR Text ...tion to case r thjc - - 0.6 c/w electr ical characteristics drain to source breakdown voltage ...38a , turn off delay time r g = 2.35 w fall time ...
Description 38 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET
HERMETIC POWER MOSFET N-CHANNEL

File Size 48.90K  /  3 Page

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For 0.38a Found Datasheets File :: 434    Search Time::1.172ms    
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