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SUMIDA[Sumida Corporation]
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| Part No. |
CDR7D28MN
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| OCR Text |
...1 121 151 221 331 471 1.2 1.5 2.0 2.7 3.3 3.6 4.2 4.5 4.6 5.1 5.5 6.1 6.5 6.8 7.2 7.7 8.0 8.3 9.0 10 12 15 18 22 27 33 39 47 56 68 82 100 12...26m) 3.40 2.75 3.45 20.5m(16.4m) 23.8m( 19m) 27.5m( 22m) Saturation Rated Current (A) *C 20 c 105 c ... |
| Description |
POWER INDUCTORS (SMD Type)
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| File Size |
225.32K /
1 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDD26AN06A0
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| OCR Text |
...perature 36 25 7 Figure 4 35 75 0.5 -55 to 175 A A A A mJ W W/oC
oC
Ratings 60 20
Units V V
Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resi... |
| Description |
60V N-Channel PowerTrench MOSFET 60V, 36A, 26mO
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| File Size |
545.16K /
11 Page |
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http://
Alpha & Omega Semiconductors
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| Part No. |
AO4822AL AO4822A
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| OCR Text |
...5A TJ=125C 1 30 13.4 20 19.5 23 0.75 1 3 955 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 145 112 0.5 17 VGS=10V, V DS=15V, ID=8.5A 9 3.4 4.7 5 VGS=10V, V DS=15V, R L=1.8, RGEN=3 IF=8.5A, dI/dt=100A/s IF=8.5A, dI/dt=100A/s 6 19 4.5 16.7 6... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
105.65K /
4 Page |
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Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FY7ACH-03A
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| OCR Text |
...ING
Dimensions in mm
6.0 4.4
5.0
1.8 MAX.
0.4 1.27
SOURCE GATE DRAIN
q 2.5V DRIVE q VDSS...26m q ID .............................................................................................. |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
38.16K /
4 Page |
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it Online |
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Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
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| Part No. |
FY7ACH-03A
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| OCR Text |
...ING
Dimensions in mm
6.0 4.4
5.0
1.8 MAX.
0.4 1.27
SOURCE GATE DRAIN
q 2.5V DRIVE q VDSS...26m q ID .............................................................................................. |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
Power MOSFETs: FY Series
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| File Size |
43.14K /
4 Page |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
HAT2204C-EL-E HAT2204C
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| OCR Text |
...f Qg Qgs Qgd VDF Min 12 8 -- -- 0.3 -- -- -- 8.5 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 26 34 45 13 770 115 50 10 9.5 36 5 9 1.5 2 0.8 Max -- 10 1 1.2 34 44 69 -- -- -- -- -- -- -- -- -- -- -- 1.1 Unit V A A V m m m S pF pF pF ns ... |
| Description |
Silicon N Channel MOS FET Power Switching
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| File Size |
131.16K /
7 Page |
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it Online |
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SUMIDA[Sumida Corporation]
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| Part No. |
RCR-875D RCH8011 RCH-855 RCH-875 RCH-895
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| OCR Text |
0 o0.7
( 2.5H - 10mH )
RCH-875
o8.3MAX.
DIMENSIONS (mm)
5.0
CONSTRUCTION
7.5MAX.
5.0 o0.7
( 2.2H - 10mH )
RCH-89...26m 4.0 2.7 17.2m 4.7 2.8 16.4m 31m 3.6 2.5 19.1m 4.5 2.7 18.5m 34m 3.4 2.4 21.2m 4.2 2.6 20.2m 39m ... |
| Description |
POWER INDUCTORS
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| File Size |
170.29K /
2 Page |
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it Online |
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Fairchild Semiconductor, Corp.
SYNC-POWER[SYNC POWER Crop.]
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| Part No. |
SPN4346S8TG SPN4346 SPN4346S8RG
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| OCR Text |
...S=0V TJ=85 VDS5V,VGS =10V
30 0.8 1.6 100 1 5 25 0.018 0.024 0.036 13 0.8 16 3 2.5 15 20 12 20 80 0.026 0.034 0.040 1.2 24
V nA uA A S V
VGS= 10V,ID=6.8A RDS(on) VGS=4.5V,ID=6.0A VGS=2.5V,ID=5.6A gfs VDS=15V,ID=6.2A VSD Qg Qgs Qgd ... |
| Description |
N-Channel Enhancement Mode MOSFET N沟道增强型MOS
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| File Size |
205.86K /
8 Page |
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it Online |
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Price and Availability
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