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  0.22a Datasheet PDF File

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOK22N50
OCR Text 0.26 w symbol the aok22n50 is fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performan...22a turn-on rise time gate source charge gate drain charge switching parameters diode forward voltag...
Description 500V,22A N-Channel MOSFET

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    International Rectifier, Corp.
Part No. IRHN9150
OCR Text ...dss r ds(on) i d irhn9150 -100v 0.080 w -22a irhn93150 -100v 0.080 w -22a features: n radiation hardened up to 3 x 10 5 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-ray) h...
Description HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管(之HEXFET晶体管)

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    IRHN9150 JANSF2N7422U JANSR2N7422U IRHN93150

International Rectifier
Part No. IRHN9150 JANSF2N7422U JANSR2N7422U IRHN93150
OCR Text ... irhn9150 100k rads (si) 0.080 ? -22a jansr2n7422u irhn93150 300k rads (si) 0.080 ? -22a jansf2n7422u features: single event effect (see) hardened low r ds(on) low total gate charge proton t olerant simple dr...
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package
22 A, 100 V, 0.085 ohm, P-CHANNEL, Si, POWER, MOSFET

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    IRGP440U

International Rectifier
Part No. IRGP440U
OCR Text ... junction-to-case ------ ------ 0.77 r q cs case-to-sink, flat, greased surface ------ 0.24 ------ c/w r q ja junction-to-ambient, typical s...22a e c g n-channel description insulated gate bipolar transistors (igbts) from international rectif...
Description 500V Discrete IGBT in a TO-3P (TO-247AC) package

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    International Rectifier, Corp.
Part No. IRF1310NSTRR
OCR Text ...iption v dss =100v r ds(on) = 0.036 w i d = 42a 2 d pak to-262 parameter typ. max. units r q jc junction-to-case CCC 0.95 r q j...22a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transco...
Description TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 42A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 42A条(丁)|63AB

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    SKP202

Sanken electric
Part No. SKP202
OCR Text ...ge v th v ds =10v, i d =1ma 3.0 4.5 v forward transconductance re(y fs ) v ds =10v, i d =22a 18 28 s static drain to source on-resistance r ds(on) i d =22a, v gs =10v 45 53 m ? input capacitance c iss 2000 output capac...
Description N-Channel MOSFET
N-Channel MOS FET

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    IRF3415L IRF3415S

IRF[International Rectifier]
Part No. IRF3415L IRF3415S
OCR Text ...d D VDSS = 150V RDS(on) = 0.042 G ID = 43A S Description Fifth Generation HEXFETs from International Rectifier utilize adva...22A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 22A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, ...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

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    RSD221N06

Rohm
Part No. RSD221N06
OCR Text ...e as *3 i ar *3 17.8 22 p d 0.85 w avalanche energy, single pulse avalanche current t c = 25c t a = 25c *4 power dissipation pulsed d...22a p d 20w * 1 esd protection diode * 2 body diode (1) gate (2) drain (3) source (1...
Description Nch 60V 22A Power MOSFET

File Size 486.04K  /  13 Page

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    FDA20N50F12

Fairchild Semiconductor
Part No. FDA20N50F12
OCR Text ... n-channel mosfet 500v, 22a, 0.26 features ?r ds(on) = 0.22 ( typ.) @ v gs = 10v, i d = 11a ? low gate charge ( typ. 50nc ) ? low c rss ( typ. 27pf ) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs comp...
Description N-Channel MOSFET 500V, 22A, 0.26Ω

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    FDA20N5012

Fairchild Semiconductor
Part No. FDA20N5012
OCR Text ...atures ? 22a, 500v, r ds(on) = 0.23 @v gs = 10 v ? low gate charge ( typical 45.6 nc) ?low c rss ( typical 27 pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power f...
Description 500V N-Channel MOSFET

File Size 785.48K  /  9 Page

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