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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOK22N50
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| OCR Text |
0.26 w symbol the aok22n50 is fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performan...22a turn-on rise time gate source charge gate drain charge switching parameters diode forward voltag... |
| Description |
500V,22A N-Channel MOSFET
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| File Size |
482.49K /
5 Page |
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it Online |
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International Rectifier, Corp.
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| Part No. |
IRHN9150
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| OCR Text |
...dss r ds(on) i d irhn9150 -100v 0.080 w -22a irhn93150 -100v 0.080 w -22a features: n radiation hardened up to 3 x 10 5 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-ray) h... |
| Description |
HEXFET Transistor(HEXFET 晶体 的HEXFET晶体管(之HEXFET晶体管)
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| File Size |
97.11K /
8 Page |
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it Online |
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International Rectifier, Corp.
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| Part No. |
IRF1310NSTRR
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| OCR Text |
...iption v dss =100v r ds(on) = 0.036 w i d = 42a 2 d pak to-262 parameter typ. max. units r q jc junction-to-case CCC 0.95 r q j...22a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transco... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 42A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 42A条(丁)|63AB
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| File Size |
183.98K /
10 Page |
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it Online |
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