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IRF[International Rectifier]
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| Part No. |
175BGQ045
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| OCR Text |
...m 175BGQ045 175 107 248 45 8700 0.61 150 - 55 to 150
Description/Features Units
A C A V A V C C The NEW 175BGQ045 Schottky rectifier has...175A @ 100A @ 175A TJ = 25 C TJ = 125C TJ = 150 C TJ = TJ max. VR = 5VDC, (test signal range 100Khz ... |
| Description |
SCHOTTKY RECTIFIER
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| File Size |
85.31K /
7 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTM20DUM10T
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| OCR Text |
...50A, RG = 2.5 Min Typ 13.7 4.36 0.19 224 86 94 28 56 81 99 926 910 1216 1062 J ns Max Unit nF
nC
J
Source - Drain diode ratings and...175A di/dt 700A/s
APTM20DUM10T
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG ... |
| Description |
Dual common source MOSFET Power Module
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| File Size |
299.53K /
6 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM20DUM10TG
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| OCR Text |
...G = 2.5
Min
Typ 13.7 4.36 0.19 224 86 94 28 56 81 99 926 910 1216 1062
Max
Unit nF
nC
ns
J
J
Source - Drain diode...175A di/dt 700A/s VR VDSS Tj 150C
APTM20DUM10TG
Thermal and package characteristics
Symbol R... |
| Description |
Dual common source MOSFET Power Module
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| File Size |
289.68K /
6 Page |
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it Online |
Download Datasheet
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Microsemi, Corp. ADPOW[Advanced Power Technology]
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| Part No. |
APT20M11JVR
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| OCR Text |
0.011
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology m...175A j G L
APT Reserves the right to change, without notice, the specifications and information c... |
| Description |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 175A 0.011 Ohm
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| File Size |
74.41K /
4 Page |
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it Online |
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Price and Availability
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