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				Renesas Electronics Corporation
Part No.	H5N3007FL-m0-ET2
OCR Text	m0 300v - 15a - mos fet high speed power switching features ? low on-resistance r ds(on) = 0.12 ? typ. (at i d = 7.5 a, v gs = 10 v, ta = 25 ? c) ? low leakage current ? high speed switching ? built-in fast recovery dio...
Description	300V - 15A - MOS FET High Speed Power Switching
File Size	96.98K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK4006DPP-m0 RJK4006DPP-m0-T2 RJK4006DPP-m0-15
OCR Text	M0 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.69 typ. (ID = 4 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS0228EJ0100 Rev.1.00 Dec 14, 2010 Outline RENESA...
Description	Silicon N Channel MOS FET High Speed Power Switching
File Size	75.99K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK4007DPP-m0 RJK4007DPP-m0-T2
OCR Text	M0 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.47 typ. (at ID = 7 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS0229EJ0100 Rev.1.00 Dec 15, 2010 Outline REN...
Description	Silicon N Channel MOS FET High Speed Power Switching 7.6 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220FL, 3 PIN
File Size	72.56K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJP30K3DPP-m0
OCR Text	m0 silicon n channel igbt high speed power switching features ? trench gate and thin wafer technology (g6h-ii series) ? low collector to emitter saturation voltage v ce(sat) = 1.1v typ ? high speed switching tr = 90 ns typ, t...
Description	Silicon N Channel IGBT High Speed Power Switching
File Size	88.71K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK5030DPP-m0 RJK5030DPP-m0-T2
OCR Text	M0 Silicon N Channel MOS FET High Speed Power Switching Features Low on-state resistance RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25C) High speed switching R07DS0227EJ0100 Rev.1.00 Dec 14, 2010 Outline RENESAS Package cod...
Description	Silicon N Channel MOS FET High Speed Power Switching
File Size	74.11K / 7 Page	View it Online	Download Datasheet

				Renesas
Part No.	RJP30K3DPP-m0
OCR Text	m0 silicon n channel igbt high speed power switching features ? trench gate and thin wafer technology (g6h-ii series) ? low collector to emitter saturation voltage v ce(sat) = 1.1v typ ? high speed switching tr = 90 ns typ, t...
Description	N-Channel Power MOSFET
File Size	149.43K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK4002DPP-m0
OCR Text	m0 silicon n channel mos fet high speed power switching features ? low on-state resistance r ds(on) = 2.4 ? typ. (at i d = 1.5 a, v gs = 10 v, ta = 25 ? c) ? high speed switching outline renesas package code: prss0003af-a...
Description	Silicon N Channel MOS FET High Speed Power Switching
File Size	73.34K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK2017DPP-m0 RJK2017DPP-m0-15
OCR Text	m0 200v - 45a - mos fet high speed power switching features ? low on-resistance r ds(on) = 0.036 ? typ. (at i d = 22.5 a, v gs = 10 v, ta = 25 ? c) ? low leakage current ? high speed switching outline renesas package c...
Description	200V - 45A - MOS FET High Speed Power Switching
File Size	75.66K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJH60M3DPP-m0
OCR Text	m0 600 v - 17 a - igbt application: inverter features ? short circuit withstand time (8 ? s typ.) ? low collector to emitter saturation voltage v ce(sat) = 1.8 v typ. (at i c = 17 a, v ge = 15 v, ta = 25c) ? built in fast r...
Description	600 V - 17 A - IGBT Application: Inverter
File Size	48.86K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJH60M2DPP-m0
OCR Text	m0 600 v - 12 a - igbt application: inverter features ? short circuit withstand time (8 ? s typ.) ? low collector to emitter saturation voltage v ce(sat) = 1.9 v typ. (at i c = 12 a, v ge = 15 v, ta = 25c) ? built in fast r...
Description	600 V - 12 A - IGBT Application: Inverter
File Size	48.86K / 4 Page	View it Online	Download Datasheet

For -m0 Found Datasheets File :: 3364 Search Time::3.562ms
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