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-3.9ghz Datasheet PDF File

For -3.9ghz Found Datasheets File :: 929 Search Time::2.547ms
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				TriQuint Semiconductor, Inc.
Part No.	WJA1025-PCB
OCR Text	...Diagram GND 4 1 2 GND 3 RF OUT Applications * * * * Wireless Infrastructure General Purpose Cellular GSM, PCS, UMTS W-CDMA, TD-SCDMA, WiMAX The WJA1025 consists of Darlington pair amplifiers using a high reliability InGaP/...
Description
File Size	188.35K / 4 Page	View it Online	Download Datasheet

				SONY
Part No.	CXG1144EN
OCR Text	...mmended) gnd (recommended) v dd 3 logic rf2 gnd gnd f3 f1 f2 f4 rf1 ctl rf3 gnd gnd rf4 v dd off state rf2 ? rf3, rf4 ? rf1 rf1 ? rf2,...9ghz 900mhz 1.9ghz 50 ? ? 1 ? 3 ? 1 ? 3 ? 2 ? 4 v dd = 2.8v v dd = 3.0v vctl (h) = 3v symbol il is...
Description	Hight Frequency Switch
File Size	56.90K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP193W Q62702-F1577
OCR Text	...P 193W RCs Q62702-F1577 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 15 dB dB ...
Description	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
File Size	60.05K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFP193 Q62702-F1282 BFP193Q62702-F1282
OCR Text	...FP 193 RCs Q62702-F1282 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 13 dB dB ...
Description	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
File Size	60.37K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1359 BFG19S BFG19
OCR Text	...19S BFG19S Q62702-F1359 1=E 2=B 3=E 4=C Package SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...9GHz VCE = Parameter 14 10V 5V dB 3V 2V 10 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Paramet...
Description	NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) NPN Silicon RF Transistor (For low noise low distortion broadband amplifiers in antenna) From old datasheet system NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna)
File Size	49.50K / 6 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon Technologies AG
Part No.	Q62702-F1382 BFP183
OCR Text	...FP 183 RHs Q62702-F1382 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 16 dB 10V...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管（对于低噪声，高增益2毫安0毫安的集电极电流宽带放大器） NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) From old datasheet system
File Size	60.49K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1492 BFR182W
OCR Text	...R 182W RGs Q62702-F1492 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB 10V...
Description	NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) From old datasheet system
File Size	55.96K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1494 BFR280W
OCR Text	...R 280W REs Q62702-F1494 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...9GHz VCE = Parameter 20 10V dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB...
Description	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems From old datasheet system
File Size	56.22K / 7 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics
Part No.	AN1465
OCR Text	...100pF L2 5.6nH C4 47nF L3 3.3nH C7 22pF TR1 J2 RF_out B J1 RF_in C2 Start 540 10pF Title Start - Applicazione con aliment...9GHz) 16 15 P1dB -0.5 dBm 14 Gp (dB) 13 12 11 10 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 ...
Description	A LNA OPTIMIZED FOR HIGH IP3OUT AT 1.9GHZ USING THE NPN SI START540 TRANSISTOR
File Size	212.65K / 10 Page	View it Online	Download Datasheet

				http:// SIEMENS[Siemens Semiconductor Group]
Part No.	BFR280 Q62702-F1298
OCR Text	...FR 280 REs Q62702-F1298 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Colle...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 13 dB 10V...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
File Size	57.01K / 7 Page	View it Online	Download Datasheet

For -3.9ghz Found Datasheets File :: 929 Search Time::2.547ms
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