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OKI SEMICONDUCTOR CO., LTD.
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| Part No. |
MSM511666CL-XXTS-K MSM511666C-XXTS-K MSM511666CL-70TS-K
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| OCR Text |
... csr t cpwd t rcs t rch t rrh t wpe t och t oep 0 0 0 min. 10 20 20 0 40 40 80 50 5 10 0 10 10 40 10 15 0 55 7 10 10 max. unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns note 11 10 10 10 ... |
| Description |
65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO (BYTE WRITE) 65,536字16位动态随机存储器:快速页面模式型江户(字节写
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| File Size |
241.86K /
16 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4E641611D-TC50 K4E661611D-TC50 K4E641611D-TC60 K4E661611D-TC60
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| OCR Text |
...ulse width (hyper page cycle) t wpe 5 5 ns ras pulse width ( c -b- r self refresh) t rass 100 100 us 22,23,24 ras precharge time ( c -b- r self refresh) t rps 90 110 ns 22,23,24 cas hold time ( c -b- r self refresh) t chs -50 -50 ns ... |
| Description |
4M x 16bit CMOS Dynamic RAM with Extended Data Out 4M X 16 EDO DRAM, 50 ns, PDSO50
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| File Size |
889.14K /
36 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM44C1005D
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| OCR Text |
...ulse width (hyper page cycle) t wpe 5 5 5 ns write command set-up time (test mode in) t wts 10 10 10 ns write command hold time (test mode in) t wth 10 10 10 ns w to ras prechrge time ( c -b- r refresh) t wrp 10 10 10 ns w to ras hol... |
| Description |
1M x 4Bit CMOS Quad CAS DRAM with Extended Data Out(1M x 4位CMOSCAS 动态RAM(带扩展数据输)
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| File Size |
394.90K /
21 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM5368005BSW
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| OCR Text |
...t wed 15 15 ns w pulse width t wpe 5 5 ns ac characteristics (0 c t a 70 c, vcc=5.0v 10%. see notes 1,2.) notes an initial pause of 200us is required after power-up followed by any 8 ras -only or cas -before- ras refresh cycles be... |
| Description |
8M x 36 DRAM SIMM(8M x 36 动RAM模块)
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| File Size |
393.31K /
19 Page |
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it Online |
Download Datasheet
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