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BAT54ADW 61200 ULN2003 3429FA DSFT313H 15VNM K81C245 SP418R
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  w glass Datasheet PDF File

For w glass Found Datasheets File :: 28214    Search Time::2.468ms    
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    PCF2105 PCF2105MU PCF2105MU_2

PHILIPS[Philips Semiconductors]
Part No. PCF2105 PCF2105MU PCF2105MU_2
OCR Text ...ter Select (parallel control) R/w: read/write (parallel control) E: data bus clock (parallel control) DB7 to DB0: data bus (parallel control...glass applications. A specific letter code `M' for a character set is programmed in the Character Ge...
Description LCD controller/driver

File Size 288.87K  /  48 Page

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    R2658P R2658

HAMAMATSU[Hamamatsu Corporation]
Part No. R2658P R2658
OCR Text ...CATHODE RADIANT SENSITIVITY (mA/w) QUANTUM EFFICIENCY (%) nm 10 window Material Structure Number of Stages Anode to Last Dynode Anode to All Other Electrodes QUANTUM EFFICIENCY 1 Base weight Suitable Socket (Option) Suitable ...
Description PHOTOMULTIPLIER TUBES

File Size 69.27K  /  4 Page

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    SS14

Fairchild Semiconductor
Part No. SS14
OCR Text ...88 -65 to +150 -65 to +125 A w mw/C C/w C C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Parameter...
Description 1.0 Ampere Schottky Barrier Rectifiers

File Size 36.50K  /  3 Page

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    TPC8102

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8102
OCR Text ....24 150 -55 to 150 Unit V V V A w w mJ A mJ C C JEDEC JEITA TOSHIBA 2-6J1B Drain power dissipation Drain power dissipation wei...glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (Unit:...
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (MOSVI)

File Size 469.72K  /  7 Page

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    TPC8106-H

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8106-H
OCR Text ....24 150 -55 to 150 Unit V V V A w w mJ A mJ C C JEDEC JEITA TOSHIBA 2-6J1B weight: 0.080 g (typ.) Drain power dissipation Drai...glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit:...
Description SILICON P CHANNEL MOS TYPE

File Size 510.73K  /  7 Page

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    TPC8107

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8107
OCR Text ...B Drain power dissipation w 1.0 w weight: 0.080 g (typ.) 219 -13 0.19 150 -55 to 150 mJ A mJ C C Circuit Configurati...glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 25.4 0.8 (unit: m...
Description Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

File Size 215.18K  /  7 Page

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    TPC8108

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8108
OCR Text ...B Drain power dissipation w 1.0 w weight: 0.080 g (typ.) 157 -11 0.19 150 -55 to 150 mJ A mJ C C Circuit Configurati...glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit:...
Description Silicon P Channel MOS Type (U-MOSIII)

File Size 340.81K  /  7 Page

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For w glass Found Datasheets File :: 28214    Search Time::2.468ms    
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