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  vceo-60v Datasheet PDF File

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    CDIL[Continental Device India Limited]
Part No. CSD880Y CSD880 CSD880GR CSD880O
Description 30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 150 - 300 hFE. Complementary CSB834GR
Audio Frequency Power Amplifier Applications

File Size 183.31K  /  3 Page

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    2SC3243

Isahaya Electronics Corporation
Part No. 2SC3243
Description 900mW Lead frame NPN transistor, maximum rating: 60V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SA1283
SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION

File Size 140.29K  /  4 Page

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    ISAHAYA[Isahaya Electronics Corporation]
N.A.
Part No. 2SD1972
Description 2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE.
For Low Frequency Power Amplify Application Silicon NPN Epitaxial Planar type

File Size 146.33K  /  3 Page

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    CMBT2907 CMBT2907A

Continental Device India Limited
Part No. CMBT2907 CMBT2907A
Description 0.250W Switching PNP SMD Transistor. 40V Vceo, 0.600A Ic, 30 hFE. Complementary CMBT2222
0.250W Switching PNP SMD Transistor. 60V Vceo, 0.600A Ic, 50 hFE. Complementary CMBT2222

File Size 64.00K  /  4 Page

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    CSD794Y CSD794O CSD794AY

Continental Device India Limited
Part No. CSD794Y CSD794O CSD794AY
Description 10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744O
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744AY

File Size 124.14K  /  3 Page

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    BCX69 BCX69-25 BCX69-16 BCX69-10

INFINEON[Infineon Technologies AG]
Part No. BCX69 BCX69-25 BCX69-16 BCX69-10
Description PNP Silicon AF Transistors 自动对焦进步党硅晶体
ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%
General Purpose Transistors - SOT89; VCEO=20V; hFE=85..375
General Purpose Transistors - SOT89; VCEO=20V; hFE=160..375
General Purpose Transistors - SOT89; VCEO=20V; hFE=100..250

File Size 44.48K  /  4 Page

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    USHA India LTD
Part No. 2SA539
Description Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.

File Size 81.70K  /  2 Page

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    CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264Q CFB940Q CFD1264P CFB940P CFD1264AP

Continental Device India Limited
Part No. CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264Q CFB940Q CFD1264P CFB940P CFD1264AP
Description 2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP

File Size 146.53K  /  3 Page

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    USHA India LTD
Part No. 2SC9011
Description Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic

File Size 76.14K  /  2 Page

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    ASI10599 HF100-12

Advanced Semiconductor, Inc.
Part No. ASI10599 HF100-12
Description NPN Silicon RF Power Transistor(Ic:20 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:20 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V))

File Size 16.09K  /  1 Page

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