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TE Connectivity, Ltd.
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| Part No. |
SST30VR043-150-C-WH SST30VR041-150-C-WH SST30VR043-150-E-WH SST30VR041-150-E-WH
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| OCR Text |
...3 Max 3.3 0 VDD + 0.5 0.3 Units V V V V
T2.0 381
TABLE 3: DC OPERATING CHARACTERISTICS
VDD = 2.7-3.3V Symbol IDD1 IDD2 ISB ILI ILO VOL ...150
Min 150 150 150 70 Max Units ns ns ns ns ns ns ns ns ns
T5.2 381
TRC Address TAA TOH Data O... |
| Description |
CY8CNP102B, CY8CNP102E Nonvolatile Programmable System-On-Chip (nvPSoC)
System on a Chip; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 100-TQFP; Features: Nonvolatile, Programmable
混合存储器| SRAM的光盘|CMOS | TSSOP封装| 32脚|塑料
MIXED MEMORY|SRAM ROM|CMOS|TSSOP|32PIN|PLASTIC 混合存储器| SRAM的光盘|的CMOS | TSSOP封装| 32脚|塑料
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| File Size |
528.63K /
12 Page |
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GSI Technology, Inc.
http://
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| Part No. |
GS8320V36T-150 GS8320V36T-133I GS8320V36T-200 GS8320V36T-166 GS8320V32GT-166 GS8320V32GT-166I GS8320V36GT-200I GS8320V18T-166I GS8320V18T-225I GS8320V18T-200I GS8320V36GT-225I GS8320V18T-133 GS8320V18T-133I GS8320V32T-225 GS8320V32GT-225I
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| OCR Text |
v v dd 1.8 v i/o 100-pin tqfp commercial temp industrial temp rev: 1.02 10/2004 1/24 ? 2003, gsi technology specifications cited are subje...150 -133 unit pipeline 3-1-1-1 t kq tcycle 2.5 4.0 2.7 4.4 3.0 5.0 3.5 6.0 3.8 6.6 4.0 7.5 ns ns cur... |
| Description |
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 7 ns, PQFP100
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 8.5 ns, PQFP100
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 36 CACHE SRAM, 7 ns, PQFP100
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 7.5 ns, PQFP100
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 7 ns, PQFP100
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 2M X 18 CACHE SRAM, 8 ns, PQFP100
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 36 CACHE SRAM, 7.5 ns, PQFP100
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 1M X 32 CACHE SRAM, 8 ns, PQFP100
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| File Size |
448.85K /
24 Page |
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it Online |
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Shenzhen Taychipst Electronic Co., Ltd
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| Part No. |
SBYV28-150 SBYV28-200 SBYV28-50
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| OCR Text |
...repetitive peak reverse voltage v rrm 50 100 150 200 v maximum rms voltage v rms 35 70 105 140 v maximum dc blocking voltage v dc 50 100 150 200 v minimum reverse breakdown voltage at 100 av (br) 55 110 165 220 v maximum average forward re... |
| Description |
Soft Recovery Ultrafast Plastic Rectifier
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| File Size |
8,950.83K /
2 Page |
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it Online |
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GSI Technology, Inc.
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| Part No. |
GS84118AGT-150 GS84118AT-100I
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| OCR Text |
v v dd 3.3 v and 2.5 v i/o tqfp, bga commercial temp industrial temp rev: 1.02 4/2005 1/20 ? 2001, gsi technology specifications cited ar...150 -133 -100 pipeline 3-1-1-1 t cycle t kq i dd 6.0 ns 3.5 ns 310 ma 6.6 ns 3.8 ns 275 ma 7.5 ns 4.... |
| Description |
256K x 18 Sync Cache Tag 256K X 18 CACHE TAG SRAM, 10 ns, PQFP100
256K x 18 Sync Cache Tag 256K X 18 CACHE TAG SRAM, 12 ns, PQFP100
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| File Size |
404.94K /
20 Page |
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it Online |
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GSI Technology, Inc.
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| Part No. |
GS88136AD-150
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| OCR Text |
...in+ cos+ sin? si cs so sclk c2? v bb /2 c2+ c1+ 124 fault v cc v bb c1? device package shipping 2 ordering information cs4122xdwf24 so?24l 3...150 c storage temperature range (t stg ) ?65 to 150 c ja (thermal resistance junction?to?ambien... |
| Description |
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
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| File Size |
87.95K /
10 Page |
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it Online |
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