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time-gain Datasheet PDF File

For time-gain Found Datasheets File :: 64486 Search Time::3.812ms
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				ROHM[Rohm]
Part No.	2SA2088
OCR Text	...ctor output capacitance Turn-on time Storage time Fall time Cob Ton Tstg Tf - - - - 10 40 110 60 - - - - pF ns ns ns 2 ...GAIN : hFE Ta=25C VCC= -25V IC / IB=10 / 1 1000 VCE= -2V -0.1 100 Tf Ton 100 ...
Description	Medium power transistor ( 60V/0.5A) Medium power transistor (−60V, −0.5A) Medium power transistor (-60V, -0.5A)
File Size	81.84K / 4 Page	View it Online	Download Datasheet

				TE Connectivity, Ltd. ROHM[Rohm]
Part No.	2SA2091S 2SA2091STPQ
OCR Text	...ctor output capacitance Turn-on time Storage time Fall time Cob Ton Tstg Tf - - - - 15 30 100 30 - - - - pF ns ns ns 2 ...GAIN : hFE Ta=25C VCC= -25V IC / IB=10 / 1 1000 VCE= -2V 100 -0.1 100 Tf Ton ...
Description	1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN Medium power transistor (60V/ 1A) Medium power transistor (−60V, −1A) Medium power transistor (-60V, -1A)
File Size	81.85K / 4 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	2SA2093
OCR Text	...ctor output capacitance Turn-on time Storage time Fall time Single non repetitive pulse Cob Ton Tstg Tf - - - - 25 25 120 30 - ...GAIN : hFE 100ms 1ms 1s Ta=25C VCC= -25V IC / IB=10 / 1 1000 VCE= -2V 100 -0.1 ...
Description	Power transistor ( 60V/2A) Power transistor (−60V, −2A) Power transistor (-60V, -2A)
File Size	81.67K / 4 Page	View it Online	Download Datasheet

				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	2SA2097
OCR Text	...emitter saturation voltage Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) t...gain 25C -55C Collector current -10 mA -2 -5 mA -2 mA 0 0 IB = -1 mA 0 -2 -4 -6 -8 1 -0....
Description	High-Speed Swtching Applications DC-DC Converter Applications
File Size	119.11K / 5 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	2SA2113
OCR Text	...z Ton - 25 - ns IC= -2A Turn-on time IB1= -200mA Tstg - 100 - ns IB2=200mA Storage time Tf - 20 - ns VCC -25V 2 Fall time 1 Non repetitive ...GAIN : hFE VCE= -2V -1 SWITCHING TIME : (ns) 100 Ta=125C Ta=25C Ta= -40C 10 -0.1 -...
Description	Medium power transistor ( 30V/2A) Medium power transistor (−30V, −2A) Medium power transistor (-30V, -2A)
File Size	42.97K / 4 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SA673A 2SA673AK 2SA673A_K
OCR Text	... Gain bandwidth product Turn on time Turn off time Storage time fT t on t off t stg Notes: 1. The 2SA673A(K) is grouped by hFE as follows. 2. Pulse test B 60 to 120 C 100 to 200 D 160 to 320 See 2SA673A except for the above - mentione...
Description	Silicon PNP Epitaxial
File Size	35.43K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SA778 2SA778A 2SA778AK 2SA778K 2SA778_K 2SA778A_K
OCR Text	...n bandwidth product f T Turn on time Turn off time Storage time t on t off t stg 2 2SA778(K), 2SA778A(K) Switching Time Test Circuit ...Gain Bandwidth Product vs. Collector Current 60 Gain bandwidth product fT (MHz) VCE = -3 V 50 Switch...
Description	Silicon PNP Epitaxial
File Size	41.66K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB1048
OCR Text	...x 0.7 mm) 10 m 100 m 1 Time t (s) 10 100 1,000 4 Unit: mm 4.5 0.1 0.4 1.8 Max 1 1.5 0.1 0.44 Max (2.5) (1.5) 1.5 1.5 3.0 0.8 Min 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) ...
Description	Silicon PNP Epitaxial/ Darlington Silicon PNP Epitaxial, Darlington
File Size	31.00K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB566 2SB566A 2SB566AK 2SB566K HITACHILTD.-2SB566AK
OCR Text	...n bandwidth product f T Turn on time Turn off time Storage time Note: B 60 to 120 t on t off t stg 1. The 2SB566(K) and 2SB566A(K) are grouped by h FE1 as follows. C 100 to 200 2 2SB566(K), 2SB566A(K) Maximum Collector Dissipation...
Description	Silicon PNP Triple Diffused
File Size	32.51K / 6 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
Part No.	2SB631 2SB631K 2SD600 2SD600K
OCR Text	...Emitter Saturation Voltage Fall Time Turn-OFF Time Storage Time Symbol hFE1 hFE2 fT Cob VCE(sat) VBE(sat) tf toff tstg Conditions VCE=(-)5V, IC=(-)50mA VCE=(-)5V, IC=(-)500mA VCE=(-)10V, IC=(-)50mA VCB=(-)10V, f=1MHz IC=(-)500mA, IB=(-)50mA...
Description	NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications 100V/120V/ 1A Low-Frequency Power Amplifier Applications 100V/120V/ 1A Low-Frequency Power Amp Applications PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amp Applications PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体
File Size	114.39K / 4 Page	View it Online	Download Datasheet

For time-gain Found Datasheets File :: 64486 Search Time::3.812ms
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