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For rule Found Datasheets File :: 4472 Search Time::3.015ms
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				IRF[International Rectifier]
Part No.	IR2111
OCR Text	...e Information Process & Design rule Transistor Count Die Size Die Outline HVDCMOS 4.0 m 164 70 X 96 X 26 (mil) Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method of...
Description	HALF-BRIDGE DRIVER
File Size	237.91K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier] HITACHI
Part No.	IR2125 HD74HC138
OCR Text	...e Information Process & Design rule Transistor Count Die Size Die Outline HVDCMOS 4.0 m 410 104 X 111 X 26 (mil) Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation (1) Pas...
Description	3-to-8-line Decoder/Demultiplexer CURRENT LIMITING SINGLE CHANNEL DRIVER
File Size	437.69K / 16 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2101
OCR Text	...e Information Process & Design rule Transistor Count Die Size Die Outline HVDCMOS 4.0 m 168 67 X 91 X 26 (mil) Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method of...
Description	HIGH AND LOW SIDE DRIVER
File Size	357.98K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IR2112
OCR Text	...e Information Process & Design rule Transistor Count Die Size Die Outline HVDCMOS 4.0 m 220 100 X 117 X 26 (mil) Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method ...
Description	HIGH AND LOW SIDE DRIVER
File Size	379.67K / 14 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2113
OCR Text	...e Information Process & Design rule Transistor Count Die Size Die Outline HVDCMOS 4.0 m 220 98 X 126 X 26 (mil) Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method o...
Description	HIGH AND LOW SIDE DRIVER
File Size	388.64K / 14 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2117
OCR Text	...e Information Process & Design rule Transistor Count Die Size Die Outline HVDCMOS 4.0 m 114 70 X 77 X 26 (mil) Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method of...
Description	SINGLE CHANNEL DRIVER
File Size	219.94K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IR2127
OCR Text	...e Information Process & Design rule Transistor Count Die Size Die Outline HVDCMOS 4.0 m 206 77 X 85 X 26 (mil) Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method of...
Description	CURRENT SENSING SINGLE CHANNEL DRIVER
File Size	187.77K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IR2153
OCR Text	...e Information Process & Design rule Transistor Count Die Size Die Outline HVDCMOS 4.0 m 231 68 X 101 X 26 (mil) Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method o...
Description	SELF-OSCILLATING HALF-BRIDGE DRIVER
File Size	209.66K / 8 Page	View it Online	Download Datasheet

				Wing Shing Computer Components
Part No.	LM2931ACT-5.0 LM2931CT-5.0
OCR Text	...Experience has shown that, as a rule of thumb, the more expensive and higher quality electrolytics generally allow a smaller value for regulator stability. As an example, while a high-quality 100"F aluminum electrolytic covers all general a...
Description	Low Dropout Regulator
File Size	357.50K / 6 Page	View it Online	Download Datasheet

For rule Found Datasheets File :: 4472 Search Time::3.015ms
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