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  rg-9 Datasheet PDF File

For rg-9 Found Datasheets File :: 32962    Search Time::1.5ms    
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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ...th insulated metal base plate * RG on,min = 27 Ohm Type BSM 50 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate...9 5.3 V VGE = VCE, IC = 4 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 ...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ...A, VCC = 480V 91 140 VGE = 15V, RG = 10 0.56 -- Energy losses include "tail" 0.28 -- mJ and diode reverse recovery 0.84 1.1 See Fig. 9,10, 18 -- -- s VCC = 360V, TJ = 125C VGE = 15V, RG = 10 , VCPK < 500V 47 -- TJ = 150C, See Fig. 11,18 30 ...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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    STGP10NC60HD STGB10NC60HD GB10NC60HD GP10NC60HD

STMICROELECTRONICS[STMicroelectronics]
Part No. STGP10NC60HD STGB10NC60HD GB10NC60HD GP10NC60HD
OCR Text ...C C 2. Vclamp=480V, Tj=150C, RG=10, VGE=15V Table 2. Symbol Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance ju...9 1.7 3.75 2.5 Typ. Max. Unit V V V V A mA nA S Collector-emitter saturation VGE= 15V, IC= 5A vol...
Description N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT

File Size 433.36K  /  15 Page

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    AOI472A

Alpha & Omega Semiconductors
Part No. AOI472A
OCR Text rg tested! - rohs compliant - halogen free symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 15 20 41 50 r jc 2.1 3 i d = 50...9.5m ? v ds (v) =25v repetitive avalanche energy l=50uh c mj avalanche current c 13 continuous dr...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 156.02K  /  7 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ... C 125C I C = 75A 100 RG = 15Ohm RG1=15;RG2 = 0 VGE = 15V VCC = 720V IC = 150 A IC = 75 A IC=37.5 A = 37A 35 10 30...9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction ...
Description    Ultra-FastTM Speed IGBT
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    STGW30NC120HD STGW30NC120HD_07 GW30NC120HD STGW30NC120HD07

STMICROELECTRONICS[STMicroelectronics]
Part No. STGW30NC120HD STGW30NC120HD_07 GW30NC120HD STGW30NC120HD07
OCR Text ...C C 2. Vclamp=960V, Tj=125C, RG=10, VGE=15V Table 2. Symbol Rthj-case Rthj-amb Rthj-amb Thermal resistance Parameter Thermal resi...9 1.7 152 722 9 Max. 2.5 Unit V V ns nC A 5/13 Electrical characteristics STGW30NC120HD ...
Description N-channel 1200V - 30A - TO-247 Very fast PowerMESH TM IGBT

File Size 273.79K  /  13 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...- VDD = 30V --- ID = 50A ns --- RG = 3.6 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and cente...9 10 8 11 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Sourc...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...- VDD = 30V --- ID = 50A ns --- RG = 3.6 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and cente...9 10 11 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source V...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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