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HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7402 FN4374
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| OCR Text |
Rad Hard, N-Channel Power MOSFET
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation H...resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltag... |
| Description |
3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET From old datasheet system 3A, 500V, 2.70 Ohm, Rad Hard, Channel Power MOSFET 3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
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| File Size |
44.98K /
8 Page |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7405 FN4375
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| OCR Text |
Rad Hard, N-Channel Power MOSFET
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation H...resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltag... |
| Description |
Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 20 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA 25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET From old datasheet system
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| File Size |
44.24K /
8 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7438 FN4638
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| OCR Text |
... 0.300 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * D... |
| Description |
From old datasheet system Formerly Available As FSL913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
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| File Size |
56.13K /
8 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSR1110R FSR1110D FN4828 FSR1110R4 FSR1110D1 FSR1110R3
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| OCR Text |
...OSFETs * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * D... |
| Description |
From old datasheet system Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
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| File Size |
86.53K /
9 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
JANSR2N7411 FN4493
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| OCR Text |
Rad Hard, P-Channel Power MOSFET
Description
The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Ha...resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltag... |
| Description |
2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFET 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET From old datasheet system
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| File Size |
44.68K /
8 Page |
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Intersil
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| Part No. |
CMM5104 FN3406
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| OCR Text |
...es
* Radiation Hardened to 10K RAD (Si) * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Error...resistant to single event upset caused by cosmic rays or heavy ions. TTL compatibility on all input ... |
| Description |
Radiation Hardened, High Reliability, CMOS/SOS 4096 Word by 1-Bit LSI Static RAM From old datasheet system
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| File Size |
41.53K /
10 Page |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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| Part No. |
FSL9130R FN4083 FSL9130R4 FSL9130D FSL9130D1 FSL9130D3 FSL9130R1 FSL9130R3 FSL913A0R
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| OCR Text |
Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space application... |
| Description |
5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF CAP 1000UF 200V ELECT TS-HB 5 A, 100 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF From old datasheet system 5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
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| File Size |
45.02K /
8 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSS9130R FN4082 FSS9130R4 FSS9130D FSS9130D1 FSS9130D3 FSS9130R1 FSS9130R3
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| OCR Text |
Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space application... |
| Description |
6A/ -100V/ 0.660 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs From old datasheet system
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| File Size |
44.30K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
FSYC360D FSYC360R4 FSYC360D1 FSYC360R FSYC360R3
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| OCR Text |
... 0.210 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * D... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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| File Size |
76.16K /
8 Page |
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it Online |
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