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DYNEX[Dynex Semiconductor]
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| Part No. |
DIM1200FSM DIM1200FSM17-A000
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| OCR Text |
...High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK)
1700V 2.7V 1200A 2400A
*(measured at the power busbars and not the auxiliary... |
| Description |
Single Switch IGBT Module
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| File Size |
153.37K /
10 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTD1N120BNS FN4649 HGTP1N120BN
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| OCR Text |
...GTD1N120BNS and HGTP1N120BN are non-punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high inp... |
| Description |
5.3A/ 1200V/ NPT Series N-Channel IGBT
5.3A, 1200V, NPT Series N-Channel IGBT
From old datasheet system
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| File Size |
71.00K /
7 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTD1N120CNS FN4652 HGTP1N120CN
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| OCR Text |
...120CNS, and the HGTP1N120CN are non-punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. These devices have the high ... |
| Description |
From old datasheet system
6.2A 1200V NPT Series N-Channel IGBT
6.2A, 1200V, NPT Series N-Channel IGBT
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| File Size |
76.20K /
7 Page |
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SEMTECH[Semtech Corporation]
Semtechoration
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| Part No. |
SR3.3TC SR3.3TG
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| OCR Text |
...ODUCTS Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
10 Peak Pulse Power - PPP (kW) 110 100 % of Rated Power or P...punch-through" to a conducting state. This structure results in a device with superior dc electrical... |
| Description |
RailClamp Low Capacitance TVS Diode Array
Datamate Trio-Tek DIL Female Housing, with Hex Slotted jackscrews, 5 5-way
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| File Size |
87.44K /
7 Page |
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it Online |
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http://
DYNEX[Dynex Semiconductor]
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| Part No. |
DIM1600FSM DIM1600FSM17-A000
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| OCR Text |
...High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK)
1700V 2.7V 1600A 3200A
*(measured at the power busbars and not the auxiliary... |
| Description |
Single Switch IGBT Module
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| File Size |
145.63K /
10 Page |
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it Online |
Download Datasheet |
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Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DIM800FSM1 DIM800FSM17-A000
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| OCR Text |
...High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK)
1700V 2.7V 800A 1600A
*(measured at the power busbars and not the auxiliary ... |
| Description |
Single Switch IGBT Module Preliminary Information
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| File Size |
143.59K /
10 Page |
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Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DIM800FSS1 DIM800FSS17-A000
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| OCR Text |
...High Thermal Cycling Capability Non Punch Through Silicon
KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK)
1700V 2.7V 800A 1600A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s s s
I... |
| Description |
Single Switch IGBT Module
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| File Size |
142.51K /
10 Page |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRAMX20UP6 IRAMX20UP60A
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| OCR Text |
...y Isolated Package Low VCE (on) Non Punch Through IGBT Technology. Undervoltage lockout for all channels Matched propagation delay for all channels 5V Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver f... |
| Description |
20A, 600V with open Emitter Pins 20A00V的开放式发射器针
20A 600V with open Emitter Pins
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| File Size |
237.88K /
17 Page |
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it Online |
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IR
http://
International Rectifier, Corp.
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| Part No. |
IRGPS40B12 IRGPS40B120U
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| OCR Text |
Non Punch Through IGBT Technology. * 10s Short Circuit Capability. * Square RBSOA. * Positive VCE (on) Temperature Coefficient. * Super-247 Package.
VCES = 1200V VCE(on) typ. = 3.12V
G E
@ VGE = 15V,
N-channel
Benefits
* Bench... |
| Description |
1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package
INSULATED GATE BIPOLAR TRANSISTOR 绝缘栅双极晶体管
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| File Size |
112.22K /
10 Page |
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it Online |
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Price and Availability
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