n-die pdf Datasheet P4 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 6045254 108M000 TC500 52Z1E9 1H106 BYX105G IRF7301 TH1002CT
	Product Description
	Full Text Search

n-die Datasheet PDF File

For n-die Found Datasheets File :: 23892 Search Time::1.219ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF150SMD
OCR Text	...1 5 1 ) SEME IRF150SMD N-CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M ax. 1 3 0 .7 6 (0 .0 3 0 ) m in . VDSS ID(cont) RDS...die) Internal Source Inductance (from centre of source pad to end of source bond wire) nH Note...
Description	N-CHANNEL POWER MOSFET
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1607
OCR Text	...ntegral reverse --- --- 570 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 85A, VGS = 0V --- 130 200 ns TJ = 25C, IF = 85A --- 690 1040 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetit...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)
File Size	179.50K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	...ntegral reverse --- --- 680 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 100A, VGS = 0V --- 73 110 ns TJ = 25C, IF = 100A --- 200 300 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetit...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1902 IRF1B902 IRF1902TR
OCR Text	N-Channel MOSFET Surface Mount Available in Tape & Reel VDSS 20V RDS(on) max (m) ) 85@VGS = 4.5V 170@VGS = 2.7V ID 4.0A 3.2A ...die capability making it ideal in a variety of power applications. With these improvements, multiple...
Description	20V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=20V)
File Size	105.83K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2204
OCR Text	...ntegral reverse --- --- 850 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 130A, VGS = 0V --- 68 100 ns TJ = 25C, IF = 130A --- 120 180 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced po...Die Measured From The Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified ...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB] Air Cost Control
Part No.	IRF240SMD
OCR Text	N-CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 ...die) Internal Source Inductance (from centre of source pad to end of source bond wire) nH Note...
Description	N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced po...Die Measured From The Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified ...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF250SMD
OCR Text	N-CHANNEL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 ...die) Internal Source Inductance (from centre of source pad to end of source bond wire) nH Note...
Description	N.CHANNEL POWER MOSFET
File Size	23.37K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804S-7P
OCR Text	...he integral reverse G S D p-n junction diode. TJ = 25C, IS = 160A, VGS = 0V TJ = 25C, IF = 160A, VDD = 20V di/dt = 100A/s e e Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited ...
Description	AUTOMOTIVE MOSFET
File Size	260.32K / 10 Page	View it Online	Download Datasheet

For n-die Found Datasheets File :: 23892 Search Time::1.219ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |