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  mos-1.9a Datasheet PDF File

For mos-1.9a Found Datasheets File :: 415    Search Time::2.516ms    
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    HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL

FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL
OCR Text ...yperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The d...1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to...
Description 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-220AB
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-263AB

File Size 151.95K  /  8 Page

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    HGTP12N60C3 HGT1S12N60C3 HGT1S12N60C3S

Harris, Corp.
HARRIS[Harris Corporation]
Fairchild Semiconductor
Part No. HGTP12N60C3 HGT1S12N60C3 HGT1S12N60C3S
OCR Text ...1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. The...1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Gate-Emitter V...
Description 24A, 600V, UFS Series N-Channel IGBTs 4A00V的,的ufs系列N沟道IGBT
24A/ 600V/ UFS Series N-Channel IGBTs

File Size 131.11K  /  6 Page

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    HGTP14N37G3VL HGT1S14N37G3VLS HGT1S14N37G3VLS9A

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. HGTP14N37G3VL HGT1S14N37G3VLS HGT1S14N37G3VLS9A
OCR Text ...IGBTs This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition...1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Induct...
Description TRANS IGBT CHIP N-CH 380V 25A 3TO-263AB
14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANS PNP BIPOLAR 45V SOT323
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB
TRANSISTOR PNP BIPOLAR 45V SOT23

File Size 156.76K  /  6 Page

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    HGTP15N120C3 HGTG15N120 HGT1S15N12 HGTG15N120C3 HGT1S15N120C3S HGT1S15N120C3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HGTP15N120C3 HGTG15N120 HGT1S15N12 HGTG15N120C3 HGT1S15N120C3S HGT1S15N120C3
OCR Text ...15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipol...
Description 35A 1200V UFS Series N-Channel IGBTs
35A/ 1200V/ UFS Series N-Channel IGBTs
35A, 1200V, UFS Series N-Channel IGBTs 35 A, 1200 V, N-CHANNEL IGBT, TO-262AA

File Size 138.80K  /  11 Page

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    HGTP5N120BN HGT1S5N120BNS FN4599

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HGTP5N120BN HGT1S5N120BNS FN4599
OCR Text ...ns. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transis...1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro...
Description From old datasheet system
21A, 1200V, NPT Series N-Channel IGBTs(21A, 1200V NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs
XC9536-7VQ44I - NOT RECOMMENDED for NEW DESIGN 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB

File Size 81.48K  /  7 Page

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    HGTP5N120CND FN4598 HGT1S5N120CNDS HGTG5N120CND

INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
Part No. HGTP5N120CND FN4598 HGT1S5N120CNDS HGTG5N120CND
OCR Text ...ns. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transis...1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro...
Description From old datasheet system
25A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(25A, 1200V,NPT系列N沟道绝缘栅双极型晶体 5 A, 1200 V, N-CHANNEL IGBT, TO-247

File Size 86.05K  /  7 Page

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    HGTP5N120CN HGT1S5N120CNS FN4596

INTERSIL[Intersil Corporation]
Part No. HGTP5N120CN HGT1S5N120CNS FN4596
OCR Text ...ns. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transis...1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro...
Description From old datasheet system
25A 1200V NPT Series N-Channel IGBT
25A, 1200V, NPT Series N-Channel IGBT
25A/ 1200V/ NPT Series N-Channel IGBT

File Size 79.50K  /  7 Page

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    HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A

INTERSIL[Intersil Corporation]
Part No. HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A
OCR Text ...ns. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transis...1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro...
Description From old datasheet system
21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21 A, 1200 V, N-CHANNEL IGBT, TO-263AB

File Size 88.17K  /  7 Page

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    TN2425 TN2425N8 TN2425ND

SUTEX[Supertex, Inc]
Part No. TN2425 TN2425N8 TN2425ND
OCR Text ...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally...1.6 mm from case for 10 seconds. BVDSS BVDGS 20V -55C to +150C 300C D S TO-243AA (SOT-89) ...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 440.85K  /  4 Page

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    TSD2931-10 SD2931-10

STMicroelectronics
Part No. TSD2931-10 SD2931-10
OCR Text ... is a gold metallized N-Channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is inte...1. Drain 2. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS ...
Description RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

File Size 91.42K  /  10 Page

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