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  MDD250-08N1 Datasheet PDF File

For MDD250-08N1 Found Datasheets File :: 74+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 |   

    SPD08N10 SPU08N10

INFINEON[Infineon Technologies AG]
Part No. SPD08N10 SPU08N10
Description SIPMOS Power Transistor

File Size 120.56K  /  8 Page

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HUA FENG CIRCUIT





    MDD72 MDD72-18N1B MDA72 MDA72-08N1B MDA72-14N1B MDA72-16N1B MDD72-08N1B MDD72-12N1B MDD72-14N1B MDD72-16N1B

IXYS[IXYS Corporation]
IXYS, Corp.
Part No. MDD72 MDD72-18N1B MDA72 MDA72-08N1B MDA72-14N1B MDA72-16N1B MDD72-08N1B MDD72-12N1B MDD72-14N1B MDD72-16N1B
Description From old datasheet system
Thyristor and Rectifiers Modules
Diode Modules 99 A, 1800 V, SILICON, RECTIFIER DIODE, TO-240AA
Diode Modules 99 A, 1200 V, SILICON, RECTIFIER DIODE, TO-240AA

File Size 125.19K  /  3 Page

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    RA08N1317M RA08N1317M-01 RA08N1317M-E01

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA08N1317M RA08N1317M-01 RA08N1317M-E01
Description Anti-Static Storage Bags; External Height:6"; External Width:4"; Features:Zipper closure, amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA
Anti-Static Storage Bags; External Height:10"; External Width:6"; Features:Zipper closure, Amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA
135-175MHz 8W 9.6V PORTABLE RADIO

File Size 61.86K  /  9 Page

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    MDD95-14N1B MDD95 MDD95-08N1B MDD95-22N1B MDD95-12N1B MDD95-16N1B MDD95-18N1B MDD95-20N1B MDD95-08N1

IXYS, Corp.
IXYS[IXYS Corporation]
Part No. MDD95-14N1B MDD95 MDD95-08N1B MDD95-22N1B MDD95-12N1B MDD95-16N1B MDD95-18N1B MDD95-20N1B MDD95-08N1
Description Diode Modules 120 A, 1600 V, SILICON, RECTIFIER DIODE, TO-240AA
Thyristor and Rectifiers Modules

File Size 122.50K  /  3 Page

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    CPC1008N CPC1008N1 CPC1008NTR

Clare, Inc.
Part No. CPC1008N CPC1008N1 CPC1008NTR
Description 4-Pin SOP OptoMOS? Relay

File Size 119.11K  /  5 Page

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Part No. IFRM08N1707
Description PROXIMITY SENSOR-INDUCTIVE, 2-2mm, 100mA, CYLINDRICAL

File Size 54.98K  /  1 Page

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    List of Unclassifed Man...
Part No. ALF08N20V ALF08N16V
Description N-CHANNEL LATERAL POWER MOSFET FOR AUDIO

File Size 588.42K  /  4 Page

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    IXZR08N120 IXZR08N120A IXZR08N120B

IXYS Corporation
Part No. IXZR08N120 IXZR08N120A IXZR08N120B
Description Z-MOS RF Power MOSFET

File Size 161.06K  /  4 Page

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    RA08N1317M10 RA08N1317M-101

Mitsubishi Electric Semiconductor
Part No. RA08N1317M10 RA08N1317M-101
Description 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO
135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

File Size 143.09K  /  9 Page

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    Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA08N1317M_06 RA08N1317M RA08N1317M-101 RA08N1317M06
Description RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO

File Size 92.10K  /  8 Page

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For MDD250-08N1 Found Datasheets File :: 74+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 |   

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