isd pdf Datasheet P4 Full Text Search --- IC-ON-LINE

isd Datasheet PDF File

For isd Found Datasheets File :: 11201 Search Time::1.484ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	STP20NK50Z STB20NK50Z STB20NK50Z-S STB20NK50ZT4 STW20NK50Z STP20NK50Z04
OCR Text	...ited by safe operating area (1) isd 17A, di/dt 200A/s, VDD V(BR)DSS, Tj T JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220/D2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Ju...
Description	RESNET 51-OHM 8-ELEMENT 5% 0.063W THK-FILM CONCAVE SMD-4.0X2.1 TR-7-PL RESISTOR ARRAY Thick Film Resistor Network; Series:RNA4A; Resistance:47kohm; Resistance Tolerance: /- 5 %; Power Rating:0.063W; Voltage Rating:25V; Temperature Coefficient: /-250 ppm; Package/Case:10-SOIC; Network Circuit Type:Dual Termination N-CHANNEL 500V -0.23Ω- 17A TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected SuperMESH MOSFET N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247 N-CHANNEL 500V -0.23ヘ- 17A TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected SuperMESH⑩ MOSFET N-CHANNEL 500V - 0.23 OHM - 17A TO-220 / D2PAK / I2SPAK / TO-247 ZENER-PROTECTED SUPERMESH MOSFET
File Size	377.46K / 13 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STN4NF03L_06 N4NF03L STN4NF03L STN4NF03L06
OCR Text	...acteristics Table 6. Symbol isd isdM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current isd=6.5A, VGS=0 isd=...
Description	N-channel 30V - 0.039ohm - 6.5A - SOT-223 STripFET II Power MOSFET
File Size	203.77K / 12 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text	...= 43A, VGS=10V (See Figure 12) isd 43A, di/dt 300A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated ...
Description	HEXFET Power MOSFET HEXFET功率MOSFET 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	122.50K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2807
OCR Text	...3A, VGS=10V (See Figure 12) isd 43A, di/dt 300A/s, VDD V(BR)DSS, TJ 175C This is a calculated value limited to TJ = 175C . Calculated continuous current based on maximum allowable junction temperature. Package limitation curr...
Description	Power MOSFET(Vdss=75V, Id=82A?) Power MOSFET(Vdss=75V, Id=82A)
File Size	149.88K / 8 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STN3NF06
OCR Text	....3 0.026 10 200 -55 to 150 (1) isd 4A, di/dt 150A/s, VDD V (BR)DSS, Tj T JMAX (2) Starting T j = 25 oC, ID = 4A, VDD = 30V Unit V V V A A A W W/C V/ns mJ C EAS (2) Tstg Tj (*) Pulse width limited by safe operating area. December...
Description	N-CHANNEL 60V - 0.07 OHM - 4A SOT-223 STRIPFET II POWER MOSFET N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II POWER MOSFET N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET II POWER MOSFET
File Size	282.38K / 8 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STL8NH3LL_06 8NH3L STL8NH3LL STL8NH3LL06
OCR Text	...ns ns ns ns Table 6. Symbol isd isdM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain Current Source-drain Current (pulsed) Forward on Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current IS...
Description	N-channel 30V - 0.012ohm - 8A - PowerFLAT Ultra low gate charge STripFET Power MOSFET
File Size	247.02K / 12 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STL80NF3LL
OCR Text	...e 8: Source Drain Diode Symbol isd isdM (3) VSD (4) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse RecoveryCharge Reverse Recovery Current isd= 20 A, VGS= 0 isd= 2...
Description	N-CHANNEL 30V - 0.0045ohm - 80A PowerFLAT(6X5) STripFET II MOSFET
File Size	282.23K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205L IRF3205S IRF3205
OCR Text	... limitation current is 75A. isd 62A, di/dt 207A/s, VDD V(BR)DSS, TJ 175C This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C. * Whe...
Description	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
File Size	144.83K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205 IRF3205PBF
OCR Text	... limitation current is 75A. isd 62A, di/dt 207A/s, VDD V(BR)DSS, TJ 175C This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C. 2 ...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A? Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
File Size	91.40K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3315S IRF3315L
OCR Text	...Gate-to-Source Voltage 1000 isd , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 25 C TJ = 175 C I D , Drain Current (A) 100 10us 100us 10 1ms 1 0.1 0.2 V GS = 0 V 0.5 0.8 1.1 1...
Description	Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A) Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
File Size	193.12K / 10 Page	View it Online	Download Datasheet

For isd Found Datasheets File :: 11201 Search Time::1.484ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |