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  id-8.8a Datasheet PDF File

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    2SJ550 2SJ550L 2SJ550S

HITACHI[Hitachi Semiconductor]
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Part No. 2SJ550 2SJ550L 2SJ550S
OCR Text ...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -15 -60 -15 Unit V V A A A A mJ W C C Body-drain diode reverse ...8 -3 V -4 VGS = -2.5 V 0 -2 -4 -6 -8 V DS (V) -10 -8 Tc = 75C -4 25C -25C -1 -2 -3 -4 V GS (V) -5...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 55.48K  /  9 Page

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    2SJ562

SANYO[Sanyo Semicon Device]
Part No. 2SJ562
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Conditions Ratings -20 10 -2 -8 1.5 3.5 150 -55 to +150 Unit V V A A W W C C Mounted on a cerami...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 146.08K  /  4 Page

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    2SJ579

SANYO[Sanyo Semicon Device]
Part No. 2SJ579
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Conditions Ratings -60 20 -1.2 -4.8 1.5 3.5 150 -55 to +150 Unit V V A A W W C C Mounted on a ce...
Description Ultrahigh-Speed Switching Applications

File Size 41.45K  /  4 Page

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    2SJ580

Sanyo Semicon Device
Part No. 2SJ580
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25C Conditions Ratings Unit -60 20 --1.8 --7.2 1.5 3.5 150 V V A A W W C C --55 to +150 Electrical Characteristics ...
Description Ultrahigh-Speed Switching Applications

File Size 29.05K  /  4 Page

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    2SJ589 2SJ589LS

SANYO[Sanyo Semicon Device]
Part No. 2SJ589 2SJ589LS
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : ...8 --6 --4 --2 0 0 --0.2 --0.4 --8 . Drain Current, ID -- A .0V Drain Current, ID -- A ...
Description P-Channel Silicon MOSFET DC / DC Converter Applications

File Size 33.13K  /  4 Page

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    2SJ596 2SJ596TP-FA

SANYO[Sanyo Semicon Device]
Part No. 2SJ596 2SJ596TP-FA
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings --60 20 --8 --32 1 20 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltag...
Description TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-252VAR
P-Channel Silicon MOSFET DC / DC Converter Applications

File Size 29.85K  /  4 Page

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    2SK1083 2SK1083-MR

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FUJI[Fuji Electric]
Part No. 2SK1083 2SK1083-MR
OCR Text ... GSS DS(on) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V Tch=25C VGS=0V Tch=125C VGS=20V VDS=0V ID=4A VGS=4V ID=4A ID=4A VGS=10V...8 Unit V V A mA nA S pF pF pF ns ns ns ns V ns fs iss oss rss d(on) r d(off) f SD rr 3 ...
Description N-channel MOS-FET

File Size 182.82K  /  2 Page

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    2SK1189

Sanken electric
Part No. 2SK1189
OCR Text ID ID (pulse) PD EAS Tch Tstg Ratings 60 20 15 60 (Tch 150C) (Ta = 25C) External dimensions 1 ...... FM20 Electrical Characteristics S...8.0A VGS = 10V, ID = 8.0A VDS = 25V, f = 1.0MHz, VGS = 0V ID = 8A, VDD = 30V, VGS = 10V, See Figure ...
Description MOSFET

File Size 33.03K  /  1 Page

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    2SK1279

FUJI[Fuji Electric]
Part No. 2SK1279
OCR Text ...e Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 500 15 60 15 20 125 150 -55 ~ +150 Unit V A A A V W C C > Equ...8 200 Unit V V A nA S pF pF pF ns ns ns ns V ns 7 - Thermal Characteristics Item Thermal R...
Description N-channel MOS-FET

File Size 198.95K  /  2 Page

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    SI9424 SI9424DY

FAIRCHILD[Fairchild Semiconductor]
Part No. SI9424 SI9424DY
OCR Text ...imum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25C unless otherw...8.0 -50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note...
Description Single P-Channel 2.5V Specified PowerTrench MOSFET

File Size 72.55K  /  5 Page

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