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  HY27UF081G2M-TPCP Datasheet PDF File

For HY27UF081G2M-TPCP Found Datasheets File :: 77+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 |   

    TPCP8510

Toshiba Semiconductor
Part No. TPCP8510
Description Transistor Silicon NPN Epitaxial Type

File Size 207.00K  /  5 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TPCP8514
Description NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8
Tech specs    

Official Product Page

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    TOSHIBA
Part No. TPCP8510
Description Power transistor for high-speed switching applications

File Size 207.89K  /  5 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TPCP8513
Description NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8
Tech specs    

Official Product Page

    TPCP8407

Toshiba Semiconductor
Part No. TPCP8407
Description MOSFETs

File Size 349.68K  /  14 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TPCP8515
Description NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
Tech specs    

Official Product Page

    TPCP8406

Toshiba Semiconductor
Part No. TPCP8406
Description MOSFETs

File Size 353.42K  /  14 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TPCP8605
Description PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PS-8
Tech specs    

Official Product Page

    TPCP8403

Toshiba Semiconductor
Part No. TPCP8403
Description Field Effect Transistor

File Size 315.63K  /  11 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TPCP8606
Description PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PS-8
Tech specs    

Official Product Page

    TPCP8405

Toshiba Semiconductor
Part No. TPCP8405
Description MOSFETs

File Size 349.31K  /  14 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TPCP8512
Description NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PS-8
Tech specs    

Official Product Page

    TPCP8402

Toshiba Semiconductor
Part No. TPCP8402
Description Field Effect Transistor Silicon MOS Type

File Size 182.45K  /  6 Page

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Toshiba Electronic Devices & Storage Corporation

Part No. TPCP8607
Description PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.32 V / tf=65 ns / PS-8
Tech specs    

Official Product Page

    TPCP8009

Toshiba Semiconductor
Part No. TPCP8009
Description Motor Drivers Mobile Equipment

File Size 229.00K  /  9 Page

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    TPCP8103-H

Toshiba Semiconductor
Part No. TPCP8103-H
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra High speed U-MOSIII)

File Size 207.31K  /  4 Page

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    TPCP8601

Toshiba Semiconductor
Part No. TPCP8601
Description Silicon PNP Epitaxial Type (PCT Process)

File Size 207.87K  /  5 Page

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For HY27UF081G2M-TPCP Found Datasheets File :: 77+       Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 |   

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