gma pdf Datasheet P4 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : AD7521TN TOP223P AN7277 SI3090C HEM572 SZ1A15 SBF13005 IM811
	Product Description
	Full Text Search

gma Datasheet PDF File

For gma Found Datasheets File :: 438 Search Time::0.86ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				INFINEON[Infineon Technologies AG]
Part No.	BGA416
OCR Text	...plifier BGA416 Features * gma = 23dB at 900MHz * Ultra high reverse isolation, 62 dB at 900MHz * Low noise figure, F50 = 1.3dB at 900MHz * On chip bias circuitry, 5.5 mA bias current at VCC = 3V * Typical supply voltage: 2.5 to 5.0V *...
Description	Silicon MMICs - DC ... 3GHz, 23dB, 62dB Isol. Cascode Amp. in SOT143 RF Cascode Amplifier
File Size	65.92K / 8 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFQ71 Q62702-F775 A0534
OCR Text	...800 MHz, Z0 = 50 Power gain gma, S21e 2 = f (IC) VCE = 6 V, f = 2 GHz, Z0 = 50 BFQ 71 Power gain Gms, S21e 2 = f (f) IC = 2 mA, VCE = 6 V, Z0 = 50 Power gain gma, Gms, S21e 2 = f (f) IC = 5 mA, VCE = 6 V, Z0 = 50 Power...
Description	From old datasheet system NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.)
File Size	498.23K / 18 Page	View it Online	Download Datasheet

				Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	Q62702-F1049 BFQ81
OCR Text	... f = 1.8 GHz Power gain 2) gma IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain \|S21e\|2 13 7.5 16 10.5 - IC = 15 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) gma = \|S21/S12\| (k-(k2-1...
Description	NPN Silicon RF Transistor for low noi... NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications)
File Size	57.09K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BFP181R Q62702-F1685
OCR Text	...7V 14 mA 17 IC Power Gain gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 24 10V 5V Power Gain gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 18 dB dB G 20 3V G 14 12 10V 5V 3V 2V 18 2V 16 8 14 1V 12 0.7V 2 0 0 2 4 ...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) From old datasheet system
File Size	59.01K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BFP181W Q62702-F1501
OCR Text	...VR 14 mA 17 IC Power Gain gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 24 dB 20 10V 3V 2V 16 14 12 10 8 6 1V 0.7V Power Gain gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 20 dB G 18 G 16 14 12 2V 10 8 6 4 1V 10V 5V 3V ...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) From old datasheet system
File Size	59.99K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BFP181 Q62702-F1271
OCR Text	...7V 14 mA 17 IC Power Gain gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 24 10V 5V Power Gain gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 18 dB dB G 20 3V G 14 12 10V 5V 3V 2V 18 2V 16 8 14 1V 12 0.7V 10 8 0 2 4...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) From old datasheet system
File Size	61.12K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BGB420 BGB420E6327
OCR Text	...nd high frequency oscillators * gma=17.5dB at 1.8GHz * Small SOT343 package * Current easy adjustable by an external resistor * Open collector output * Typical supply voltage: 1.4-3.3V * SIEGET(R)-25 technology Bias,4 Bias C,3 Desc...
Description	Active Biased Transistor Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343 MMIC, LNA
File Size	436.18K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BGB540
OCR Text	... BGB540 Power Gain \|S21\|2, gma, Gms = f(f) V = 3V, I = 20mA D C 40 Power Gain gma, Gms = f(f) V = 3V D 40 35 35 0.3GHz 30 30 \|S21\|2, gma, Gms [dB] gma, Gms [dB] 25 Gms 25 0.9GHz 20 20 1.9GHz 1...
Description	Active Biased RF Transistor Silicon MMICs - Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343
File Size	95.55K / 10 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BFP620F
OCR Text	...ble gain Gms = 21 dB at 1.8 GHz gma = 10 dB at 6 GHz * Gold metallization for extra high reliability *Short-term description Top View 3 4 3 4 XYs 2 1 TSFP-4 XYs 1 2 Direction of Unreeling ESD: Electrostatic discharge sens...
Description	NPN Silicon Germanium RF Transistor
File Size	156.31K / 6 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BFP620
OCR Text	...e gain Gms = 21.5 dB at 1.8 GHz gma = 11 dB at 6 GHz * Gold metallization for extra high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! 3 4 2 1 VPS05605 Type BFP620 Maximum Ratings Parame...
Description	NPN Silicon Germanium RF Transistor
File Size	207.41K / 7 Page	View it Online	Download Datasheet

For gma Found Datasheets File :: 438 Search Time::0.86ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |