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				STMICROELECTRONICS[STMicroelectronics]
Part No.	VNP7N04
OCR Text	...Test Cond ition s V DD = 15 V V gen = 10 V (see figure 3) V DD = 15 V V gen = 10 V (see figure 3) V DD = 15 V V i n = 10 V V DD = 12 V Id = 3.5 A R gen = 10 Min. Typ . 50 60 130 50 140 0.4 2.5 1 50 18 Max. 100 120 200 100 280 0.8 4 2 Un it...
Description	”OMNIFET? FULLY AUTOPROTECTED POWER MOSFET OMNIFET: FULLY AUTOPROTECTED POWER MOSFET ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
File Size	132.47K / 11 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	VNW50N04A 5650
OCR Text	...Test Cond ition s V DD = 15 V V gen = 10 V (see figure 3) V DD = 15 V V gen = 10 V (see figure 3) V DD = 15 V V i n = 10 V V DD = 15 V Id = 25 A R gen = 10 Min. Typ . 100 400 800 500 1.8 3 18 10 55 190 Max. 200 700 1500 900 3 5 25 15 Un it...
Description	”OMNIFET? FULLY AUTOPROTECTED POWER MOSFET OMNIFET: FULLY AUTOPROTECTED POWER MOSFET From old datasheet system ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
File Size	124.67K / 11 Page	View it Online	Download Datasheet

				??????浣? STMICROELECTRONICS[STMicroelectronics]
Part No.	VNW50N04 4552
OCR Text	...Test Cond ition s V DD = 15 V V gen = 10 V (see figure 3) V DD = 15 V V gen = 10 V (see figure 3) V DD = 15 V V i n = 10 V V DD = 15 V Id = 25 A R gen = 10 Min. Typ . 100 400 800 500 1.8 3 18 10 55 190 Max. 200 700 1500 900 3 5 25 15 Un it...
Description	??MNIFET?? FULLY AUTOPROTECTED POWER MOSFET ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET From old datasheet system OMNIFET: FULLY AUTOPROTECTED POWER MOSFET ”OMNIFET? FULLY AUTOPROTECTED POWER MOSFET
File Size	133.89K / 11 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6X4016C3F-TQ55 K6X4016C3F-TF55 K6X4016C3F K6X4016C3F-TQ70 K6X4016C3F-B K6X4016C3F-F K6X4016C3F-Q K6X4016C3F-TB55 K6X4016C3F-TB70 K6X4016C3F-TF70
OCR Text	... FUNCTIONAL BLOCK DIAGRAM Clk gen. Precharge circuit. Vcc Vss 44-TSOP2 Forward Row Addresses Row select Memory array I/O...II (400F) CMOS SRAM Units: millimeter(inch) 0~8 0.25 ( ) 0.010 #44 #23 0.45 ~0.75 0.018 ~ 0.0...
Description	256Kx16 bit Low Power full CMOS Static RAM 256Kx16位充分的CMOS低功耗静态存储器
File Size	129.39K / 9 Page	View it Online	Download Datasheet

				http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K6X8008C2B-TQ55 DSK6X8008C2B K6X8008C2B K6X8008C2B-B K6X8008C2B-F K6X8008C2B-Q K6X8008C2B-TB55 K6X8008C2B-TB70 K6X8008C2B-TF55 K6X8008C2B-TF70 K6X8008C2B-TQ70 DS_K6X8008C2B
OCR Text	... FUNCTIONAL BLOCK DIAGRAM Clk gen. Precharge circuit. Vcc Vss Row Addresses Row select Memory array 44-TSOP2 Forward I/O1~I...II (400F) CMOS SRAM Unit: millimeters(inches) 0~8 0.25 ( ) 0.010 #44 #23 0.45 ~0.75 0.018...
Description	1Mx8 bit Low Power and Low Voltage CMOS Static RAM 1Mx8位低功耗和低电压的CMOS静态RAM
File Size	129.87K / 9 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. DiCon Fiberoptics, Inc.
Part No.	K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4D261638F K4D261638F-TC50 K4D261638 K4D261638F-TC2A K4D261638F-TC36 K4D261638F-TC250 K4D261638F-LC250
OCR Text	... Latency & Burst Length Strobe Gen. Data Strobe Programming Register LCKE LRAS LCBR LWE LCAS LWCBR DLL CK,CK LDMi Timing Reg...II - 1) K4D261638F-TC25 Frequency Cas Latency 400MHz (2.5ns) 5 350MHz ( 2.86ns ) 4 300MHz ( 3.3ns )...
Description	128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存 8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
File Size	223.53K / 18 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
Part No.	K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4D551638F K4D551638F-TC K4D551638F-TC60 K4D551638F-TC40
OCR Text	... Latency & Burst Length Strobe Gen. Data Strobe Programming Register LCKE LRAS LCBR LWE LCAS LWCBR DLL CK,CK LDMi Timing Reg...II) (Unit : Number of Clock) K4D551638D-TC33 Frequency Cas Latency 300MHz ( 3.3ns ) 3 tRC 15 ...
Description	256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
File Size	204.60K / 16 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] Motorola Inc
Part No.	DSP56002FC66 DSP56002FC40 DSP56002PV40 DSP56002RC40 DSP56002PV66 DSP56002FC80 DSP56002PV80 DSP56002
OCR Text	...us Switch OnCETM Port PLL Clock Gen. 7 4 Address Generation Unit PAB XAB YAB GDB PDB XDB YDB External Address Bus Switch Address...ii DSP56002/D, Rev. 3 MOTOROLA DSP56002 Features FEATURES Digital Signal Processing C...
Description	24-BIT DIGITAL SIGNAL PROCESSOR
File Size	623.84K / 110 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6R4016C1C-C K6R4016C1C-C10 K6R4016C1C-C12 K6R4016C1C-C15 K6R4016C1C-E K6R4016C1C-E10 K6R4016C1CE12 K6R4016C1CE15 K6R4016C1C-I K6R4016C1C-I10 K6R4016C1C-I12 K6R4016C1C-I15
OCR Text	... FUNCTIONAL BLOCK DIAGRAM Clk Gen. A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 I/O1~I/O8 I/O9~I/O16 ORDERING INFORMATION K6R4016C1C-C10/C12/C15 Commercial Temp. Extended Temp. Industrial Temp. K6R4016C1C-E10/E12/E15 K6R4016C1C-I10/I12/I15 Pre-C...
Description	256Kx16 Bit High Speed Static RAM(5V Operating).
File Size	183.08K / 11 Page	View it Online	Download Datasheet

				Level Ones
Part No.	LXT335
OCR Text	...IRUPDQFH OLQH UHFHLYHUV ZLWK ie GEn VLQ JOH WRQH LQWHUIHUHQFH PDUJLQ 'DWD UHFRYHU\ IRU FDEOH DWWHQXDWLRQ RI XS WR ie GE DW iiee NK] 2QFKLS...ii ii ie ie ie ie ic /;7eee iae ia ia ei ei ec eae ea ea ei ei 7DEOH ia 3LQ 'HVFULSWLRQV...
Description	Quad Short Haul PCM Analog Interface
File Size	392.04K / 16 Page	View it Online	Download Datasheet

For gen-ii Found Datasheets File :: 1411 Search Time::0.891ms
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