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fet2-16 Datasheet PDF File

For fet2-16 Found Datasheets File :: 137 Search Time::0.938ms
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				NEC
Part No.	UPA1952 UPA1952TE UPA1952TE-T2 UPA1952TE-T1
OCR Text	...e - C/W 1000 PD (FET1) : PD (FET2) = 1: 0 100 PD (FET1) : PD (FET2) = 1: 1 10 Single pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm...16 V -3 -2 -1 0 0 0.5 1 1.5 2 2.5 3 QG - Gate Change - nC 6 Data Sheet G15933EJ...
Description	Pch enhancement-type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	70.09K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	UPA1872 UPA1872GR-9JG UPA1872GR-9JG-E1 UPA1872GR-9JG-E2
OCR Text	...1 Single Pulse PD (FET1) : PD (FET2) = 1:1 DC 0 0 30 60 120 90 TA - Ambient Temperature - C 150 0.01 0.1 10 1 VDS - Dr...16 V 10 V 3 VGS = 0 V VGS - Gate to Source Voltage - V 4 10 1 2 0.1 1 0.01 ...
Description	N-channel enhancement type MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	68.38K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	UPA1870B UPA1870BGR-9JG UPA1870BGR-9JG-E1 UPA1870BGR-9JG-E2
OCR Text	... Single pulse PD (FET1) : PD (FET2) = 1:1 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G1...16.0 V tf 3 100 tr 2 td(on) VDD = 10.0 V VGS = 4.0 V RG = 10 1 10 0.1 1 10 ...
Description	N-channel enhancement type MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	81.88K / 7 Page	View it Online	Download Datasheet

				TriQuint Semiconductor,Inc. TRIQUINT[TriQuint Semiconductor]
Part No.	TGA8035 TGA8035-SCC TGA8035---SCC
OCR Text	...drain current at saturation for FET2 ** TA = 25C V DS = 0.5 V to 3.5 V, V GS = 0 V DS = 0.5 V to 3.5 V, V GS = 0 36 36 108 108 mA mA * VDS1 for I DSS1 is drain voltage between 0.5 V and 3.5 V at which drain current is highes...
Description	Gain Block Amplifier Two - stage GaAs monolithic amplifier
File Size	221.56K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics, Corp. RENESAS[Renesas Electronics Corporation]
Part No.	RQM2201DNSTR-E RQM2201DNS RQM2201DNSTL-E
OCR Text	...cs are applied to both FET1 and FET2. Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain cur...16, 2007 Page 1 of 7 RQM2201DNS Electrical Characteristics (Ta = 25C) Item Drain to source b...
Description	Silicon N Channel MOS FET Power Switching 通道场效应晶体管功率开
File Size	112.34K / 8 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	FTD8004
OCR Text	... Allowable Power Dissipation(FET2), PD -- W IT07093 Note on usage : Since the FTD8004 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products describ...
Description	Nch Nch N-Channel Silicon MOSFET General-Purpose Switching Device
File Size	38.04K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF7169C 7169CT_N
OCR Text	... Pin FET1 Matching circuits FET2 Pout VD1 VD2 ZI(ES) ZL(ES) Equivalent circuit of MGF7169C with our test board : MGF7...16 2.14 Aug. '97 MITSUBISHI ELECTRIC (16/20) MITSUBISHI SEMICONDUCTOR <GaAs MMIC> Preliminary...
Description	From old datasheet system UHF BAND GaAs POWER AMPLIFIER
File Size	348.24K / 20 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
Part No.	MGF7170AC
OCR Text	... Pin FET1 Matching circuits FET2 Pout VD1 VD2 ZI(TS) ZL(TS) Equivalent circuit of MGF7170AC with our test board : MGF...16) Aug. '97 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> Preliminary information MGF7170AC UHF...
Description	UHF BAND GaAs POWER AMPLIFIER
File Size	301.85K / 16 Page	View it Online	Download Datasheet

For fet2-16 Found Datasheets File :: 137 Search Time::0.938ms
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