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Electronic Theatre Controls, Inc.
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| Part No. |
AN-937
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| OCR Text |
...ve vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the...type silicon (drain-channel-source). Field-effect transistors can be of two types: enhancement mode ... |
| Description |
Gate Drive Characteristics and Requirements for HEXFET
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| File Size |
365.72K /
21 Page |
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ETC[ETC]
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| Part No. |
AN-937
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| OCR Text |
...ve vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the...type silicon (drain-channel-source). Field-effect transistors can be of two types: enhancement mode ... |
| Description |
Gate Drive Characteristics and Requirements for HEXFET
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| File Size |
361.85K /
21 Page |
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it Online |
Download Datasheet |
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New Jersey Semi-Conductor Products, Inc.
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| Part No. |
MFE211 MFE212
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| OCR Text |
...ffect transistors .. . high yfs depletion mode dual gate transistors designed for vhp amplifier and mixer applications. ? mfe211 ? vhf ampli...type "j" slug l2. 9 turns #28, s/32" diameter form, type "j" slug
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| Description |
N-. HANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
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| File Size |
94.15K /
2 Page |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD4000AF
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| OCR Text |
...
The FPD4000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power ap...Type Status: D=Development P = Production Part Code denotes model (e.g. FPD4000AF) Part Type: F = FE... |
| Description |
4W PACKAGED POWER PHEMT
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| File Size |
705.05K /
9 Page |
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SGS Thomson Microelectronics
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| Part No. |
AN1228
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| OCR Text |
...he dynamics of the drain-source depletion spread as a function of drain bias. the three regions of the capacitance-voltage (cv) characteristics in figure 2 are indicative of device formation. figure 2: reverse transfer capacitance vs. suppl... |
| Description |
RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE
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| File Size |
79.90K /
4 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD10000AF
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| OCR Text |
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The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power ap...Type Status: D=Development P = Production Part Code denotes model (e.g. FPD10000AF) Part Type: F = F... |
| Description |
10W PACKAGED POWER PHEMT
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| File Size |
182.95K /
3 Page |
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it Online |
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Price and Availability
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