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  d-63 Datasheet PDF File

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text D Features Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Al...63 19 24 18 150 36 92 4.5 7.5 2840 420 250 1630 360 560 --- --- 7.5 4.0 --- 20 250 200 -200 95 --- -...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text D 200C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche ...63 nC VDS = 32V 59 VGS = 10V, See Fig. 6 and 13 --- VDD = 20V --- ID = 100A ns --- RG = 2.5 --- VGS...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

File Size 100.05K  /  8 Page

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
OCR Text ...ion S S S G 1 8 A A D D D D 2 7 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID...63 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, ...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)

File Size 105.83K  /  9 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...onents to PC Boards" Symbol D Ordering Information PART NUMBER IRF234 IRF235 IRF236 IRF237 PACKAGE TO-204AA TO-204AA TO-204AA TO-204...63 180 1.3 2.0 390 2.7 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repet...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text D Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax ...63 71 17 150 110 105 4.5 7.5 6930 1750 970 5740 1570 2340 --- --- 1.6 4.0 --- 20 250 200 -200 260 --...
Description AUTOMOTIVE MOSFET

File Size 260.32K  /  10 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text D Advanced Process Technology Surface Mount (IRF3315S) Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast Switching Full...63 20 350 12 9.4 2.5 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Th...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

File Size 193.12K  /  10 Page

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    IRF3515L IRF3515S

IRF[International Rectifier]
Part No. IRF3515L IRF3515S
OCR Text .... Typ. Max. Units Conditions D MOSFET symbol 41 --- --- showing the A G integral reverse --- --- 164 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 25A, VGS = 0V --- 200 300 ns TJ = 25C, IF = 25A --- 1.6 2.4 C di/dt = 100A/s Intrin...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

File Size 122.87K  /  10 Page

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    IRF36 IRF-36

VISAY[Vishay Siliconix]
Part No. IRF36 IRF-36
OCR Text ... inches [millimeters] C (Max.) D (Max.) A (Max.) B (Max.) 0.98 [25.0] Min. 1.22 [31.0] Max. MODEL IRF-36 A (Max.) 0.236 [6.0] B (Max.) 0.157 [4.0] C (Max.) 0.551 [14.0] D (Max.) 0.026 [0.65] DESCRIPTION IRF-36 MODEL 4...
Description Inductors Epoxy Conformal Coated, Axial Leaded

File Size 113.79K  /  1 Page

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    IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR

IRF[International Rectifier]
Part No. IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text ...D trr Qrr trr Qrr Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 31A, VGS = 0V TJ = 125C...63 ) 1 .5 0 (.0 59 ) 4 .1 0 ( .1 6 1) 3 .9 0 ( .1 5 3) 1.60 (.06 3) 1.50 (.05 9) 0 .3 68 (.0 145 ) ...
Description 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)

File Size 141.65K  /  10 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...anche Rated Description l l D VDSS = -55V RDS(on) = 0.06 G ID = -31A S Fifth Generation HEXFETs from International Rectifie...63 7.5 1200 520 250 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = ...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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