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RT8272 1N475 D2HNK 40348V1 GAL22V 333M00 58074 AN8208S
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For cuttoff Found Datasheets File :: 48    Search Time::2.422ms    
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    BFY18111

Infineon Technologies AG
Infineon Technologies A...
Part No. BFY18111
OCR Text ... - 50 na emitter base cuttoff current v eb = 2 v, i c = 0 i ebo - - 25 ? eb = 1 v, i c = 0 i ebo - - 0.5 ? notes: 1.) this test assures v(br) ce0 > 12v bfy181 ifag i...
Description HiRel NPN Silicon RF Transistor

File Size 123.00K  /  4 Page

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    BFY18211

Infineon Technologies AG
Infineon Technologies A...
Part No. BFY18211
OCR Text ... - 50 na emitter base cuttoff current v eb = 2 v, i c = 0 i ebo - - 25 ? eb = 1 v, i c = 0 i ebo - - 0.5 ? notes: 1.) this test assures v(br) ce0 > 12v bfy182 ifag i...
Description HiRel NPN Silicon RF Transistor

File Size 122.92K  /  4 Page

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    BFY40511

Infineon Technologies AG
Part No. BFY40511
OCR Text ... (t.b.d.) a emitter - base cuttoff current v eb = 1.5 v, i c = 0 i ebo - - 5.0 ? c = 5 ma, v ce = 1 v h fe 50 90 150 - notes: 1.) this test assures v(br) ce0 > 4.5v bfy405 ifag...
Description HiRel NPN Silicon RF Transistor

File Size 122.06K  /  4 Page

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    BFY42011

Infineon Technologies AG
Infineon Technologies A...
Part No. BFY42011
OCR Text ... (t.b.d.) a emitter - base cuttoff current v eb = 1.5 v, i c = 0 i ebo - - 20 ? c = 5 ma, v ce = 1 v h fe 50 90 150 - notes: 1.) this test assures v(br) ce0 > 4.5v bfy420 ifag ...
Description HiRel NPN Silicon RF Transistor
   HiRel NPN Silicon RF Transistor

File Size 122.15K  /  4 Page

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    XM116

Calogic, LLC
Part No. XM116
OCR Text ...te-Body Breakdown Voltage Drain cuttoff Current Source Cutoff Current Gate-Body Leakage Gate-Source (Note 1) Gate-Drain Capacitance (Note 1) Drain-Body Capacitance (Note 1) Input Capacitance (Note 1) 1 30 30 30 60 10 10 100 2.5 2.5 7 10 pF ...
Description Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier

File Size 16.64K  /  1 Page

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    SEMICOA[Semicoa Semiconductor]
Part No. 2N3810
OCR Text ...0 V, TA = +150 C Collector-Base cuttoff Current VCE = 50 V, IC = 1 A o Symbol V(BR)CBO Min 60 Max --- Unit V V(BR)CEO 60 --- V V(BR)EBO 5.0 --- V ICBO1 --- 10 nA ICBO2 --- 10 ...
Description Type 2N3810 Geometry 0220 Polarity PNP
Chip Type 2C2605 Geometry 0220 Polarity NPN

File Size 41.74K  /  3 Page

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    2N3811

SEMICOA[Semicoa Semiconductor]
Part No. 2N3811
OCR Text ...0 V, TA = +150 C Collector-Base cuttoff Current VCE = 50 V, IC = 1 A o Symbol V(BR)CBO Min 60 Max --- Unit V V(BR)CEO 60 --- V V(BR)EBO 5.0 --- V ICBO1 --- 10 nA ICBO2 --- 10 ...
Description Type 2N3811 Geometry 0220 Polarity PNP
Type 2N3811 Geometry 0220 Polarity PNP

File Size 55.89K  /  3 Page

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    BFY45011

Infineon Technologies AG
Part No. BFY45011
OCR Text ... (t.b.d.) a emitter - base cuttoff current v eb = 1.5 v, i c = 0 i ebo - - 50 ? c = 20 ma, v ce = 1 v h fe 50 90 150 - notes: 1.) this test assures v(br) ce0 > 4.5v bfy450 ifag...
Description HiRel NPN Silicon RF Transistor

File Size 122.06K  /  4 Page

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    TIP105 TIP100 TIP106 TIP101 TIP102 TIP107 ON2977

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
Part No. TIP105 TIP100 TIP106 TIP101 TIP102 TIP107 ON2977
OCR Text ...= 5.0 Vdc, IC = 0) Collector cuttoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) Collector-Emitter Sust...
Description DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
From old datasheet system
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

File Size 218.72K  /  6 Page

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    BFY640 BFY640B

Infineon Technologies AG
Part No. BFY640 BFY640B
OCR Text ... - 200 a emitter - base cuttoff current v eb = 1. 2 v, i c = 0 i ebo - - 5 ? c = 3 0 ma, v ce = 3 v h fe 1 35 18 0 2 5 0 - ac characteristics collector - base ...
Description HiRel NPN Silicon Germanium RF Transistor

File Size 114.34K  /  3 Page

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