| |
|
 |
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| Part No. |
KM29U128T
|
| OCR Text |
...gram operation programs the 528-byte page in typically 200 m s and an erase operation can be performed in typ- ically 2ms on a 16k-byte bloc...1024 block) 512 byte 8 bit 16 byte 1 block(=32 row) (16k + 512) byte i/o 0 ~ i/o 7 1 page = 528 byt... |
| Description |
16M x 8 Bit NAND Flash Memory
|
| File Size |
484.80K /
26 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
INFINEON[Infineon Technologies AG]
|
| Part No. |
SLE66CLX320P-M84 SLE66CLX320P SLE66CLX320P-C
|
| OCR Text |
... protection larger than 6 kV
Byte wise EEPROM programming and read accesses Versatile & Flexible page mode for 1 to 256 bytes write/erase...1024 bit 1024 bit
160 bit 256 bit 512 bit 16 bit 1024 bit
20 ms 35 ms 110 ms 20 ms 820 ms
7... |
| Description |
Security & Chip Card ICs
|
| File Size |
174.89K /
12 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| Part No. |
K9K1G08U0M-YIB0 K9K1G08U0M-YCB0
|
| OCR Text |
...d in typical 200 m s on the 528-byte page and an erase operation can be performed in typical 2ms on a 16k-byte block. data in the page can b...1024 block) (1024 block) (1024 block) (1024 block) page 0 page 1 page 31 page 30 memory map block 0 ... |
| Description |
128M x 8 Bit NAND Flash Memory
|
| File Size |
477.43K /
37 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| Part No. |
K9F6408U0M-TCB0 K9F6408U0M-TIB0
|
| OCR Text |
...gram operation programs the 528-byte page in typically 200 m s and an erase operation can be performed in typ- ically 2ms on an 8k-byte bloc...1024 block) 512 byte 8 bit 16 byte 1 block(=16 row) (8k + 256) byte i/o 0 ~ i/o 7 1 page = 528 byte... |
| Description |
8M x 8 Bit NAND Flash Memory
|
| File Size |
483.65K /
26 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|