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720v Datasheet PDF File

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				ST Microelectronics STMicroelectronics 意法半导
Part No.	STW12NK90Z
OCR Text	...stive Load see, Figure 3) VDD = 720v, ID = 10 A, VGS = 10V SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Re...
Description	N-CHANNEL 900V 0.72 OHM 11A TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET
File Size	306.58K / 9 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
Part No.	STU7NB90I STU7NB90
OCR Text	...e test circuit, Figure 3) VDD = 720v, ID = 7.4A, VGS = 10V Min. Typ. 25 12 51 12.5 23.5 72 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 720v...
Description	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh MOSFET OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMeshMOSFET
File Size	402.17K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQP4N90
OCR Text	...ource Voltage [V] 8 VDS = 720v Capacitance [pF] 900 Coss 600 6 Crss 300 Notes : 1. VGS = 0 V 2. f = 1 MHz 4 2 Note : ID = 4.2 A 0 -1 10 0 10 0 10 1 0 5 10 15 20 25 30...
Description	900V N-Channel MOSFET
File Size	632.31K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PF50W
OCR Text	...TJ = 25C ns 170 IC = 28A, VCC = 720v 220 VGE = 15V, RG = 5.0 --- Energy losses include "tail" --- mJ See Fig. 10, 11, 13, 14 1.7 --- TJ = 150C, --- IC = 28A, VCC = 720v ns --- VGE = 15V, RG = 5.0 --- Energy losses include "tail" --- mJ See ...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	125.36K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	FQA9N90
OCR Text	...[V] 3000 Ciss 8 VDS = 720v Capacitance [pF] 2000 Coss 6 4 1000 Crss Notes : 1. VGS = 0 V 2. f = 1 MHz 2 Note : ID = 8.6 A 0 -1 10 0 10 0 10 1 0 10 20 30 40 50 60...
Description	900V N-Channel MOSFET 8.6 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	677.85K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation
Part No.	SSH6N90A
OCR Text	...A VGS=30V VGS=-30V VDS=900V VDS=720v,TC=125 C VGS=10V,ID=3A VDS=50V,ID=3A 4 O* 4 O V/ C ID=250A 1560 2030 135 160 54 22 40 99 32 68 11.5 30.9 63 55 90 210 75 89 --nC ns VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=450V,ID=6A, RG=11.5 S...
Description	Advanced Power MOSFET
File Size	259.64K / 7 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	HGTG20N120C3D G20N120
OCR Text	...ction temperature. 2. VCE(PK) = 720v, TJ = 125oC, RGE = 3. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC MIN 1200 5.0 ...
Description	45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 45 A, 1200 V, N-CHANNEL IGBT, TO-247 45A/ 1200V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	97.30K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTG20N120 HGTG20N120E2 G20N120
OCR Text	...ion temperature. 2. VCE(PEAK) = 720v, TC = +125oC, RGE = 25 HGTG20N120E2 1200 1200 34 20 100 20 30 100A at 0.8 BVCES 150 1.20 -55 to +150 260 UNITS V V A A A V V W W/oC oC oC 3 15 s s HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVE...
Description	34A/ 1200V N-Channel IGBT 34A, 1200V N-Channel IGBT
File Size	167.11K / 5 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	SSP6N90A
OCR Text	...A VGS=30V VGS=-30V VDS=900V VDS=720v,TC=125 C VGS=10V,ID=3A VDS=50V,ID=3A 4 O* 4 O V/ C ID=250A 1560 2030 135 160 54 22 40 99 32 68 11.5 30.9 63 55 90 210 75 89 --nC ns VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=450V,ID=6A, RG=11.5 S...
Description	Advanced Power MOSFET
File Size	257.16K / 7 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
Part No.	STP6NB90FP STP6NB90 6444
OCR Text	...er Time Test Con ditions V DD = 720v ID = 6 A R G = 4.7 V GS = 10 V Min. T yp. 15 15 25 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Fo...
Description	N - CHANNEL 900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET -频道900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET N - CHANNEL 900V - 1.7 - 5.8A - TO-220/TO-220FP PowerMESH TM MOSFET From old datasheet system N - CHANNEL 900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET
File Size	108.12K / 9 Page	View it Online	Download Datasheet

For 720v Found Datasheets File :: 430 Search Time::1.141ms
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