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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF7S19080HSR3 MRF7S19080HR3
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| OCR Text |
...VDD Tstg TC TJ
Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225
Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Cha...Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.0... |
| Description |
RF Power Field Effect Transistors
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| File Size |
633.44K /
16 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BLF6G22S-45112
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| OCR Text |
...nit v ds drain-source voltage - 65 v v gs gate-source voltage - 0.5 +13 v t stg storage temperature - 65 +150 c t j junction temperature - ...channel power ratio p l(av) = 2.5 w - - 48 - 45 dbc
blf6g22s-45_2 ? nxp b.v. 2008. all rights res... |
| Description |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
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| File Size |
59.48K /
10 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
MRF6S9060NR1 MRF6S9060NBR1
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| OCR Text |
... 0.5, +68 - 0.5, + 12 227 1.3 - 65 to +150 200 Unit Vdc Vdc W W/C C C
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MR...Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB ... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
621.21K /
16 Page |
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it Online |
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Freescale Semiconductor...
FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S9045NR1 MRF6S9045N MRF6S9045NBR1
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| OCR Text |
... 0.5, +68 - 0.5, + 12 175 1.0 - 65 to +150 200 Unit Vdc Vdc W W/C C C
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MR...Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. PAR = 9.8 dB ... |
| Description |
RF Power Field Effect Transistors
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| File Size |
623.99K /
16 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S27015NR1_07 MRF6S27015GNR1 MRF6S27015NR1 MRF6S27015NR107
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| OCR Text |
...
Value - 0.5, +68 - 0.5, +12 - 65 to +175 150 225
Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resista...Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB... |
| Description |
RF Power Field Effect Transistors
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| File Size |
538.89K /
17 Page |
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it Online |
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Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF6P27160HR6
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| OCR Text |
... 0.5, +68 - 0.5, +12 603 3.45 - 65 to +150 200 160 Unit Vdc Vdc W W/C C C W
Table 2. Thermal Characteristics
Characteristic Thermal Resi...Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 885 kHz Offset. Peak/Avg. = 9... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET RF功率场效应晶体管N沟道增强型MOSFET的侧
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| File Size |
440.42K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
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| Part No. |
MRF6P27160H_06 MRF6P27160H MRF6P27160HR6_06 MRF6P27160HR6 MRF6P27160HR606 MRF6P27160H06
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| OCR Text |
... 0.5, +68 - 0.5, +12 603 3.45 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resi...Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 885 kHz Offset. PAR = 9.8 dB ... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
2700 MHz, 35 W AVG., 28 V Single N??DMA Lateral N??hannel RF Power MOSFET
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| File Size |
483.58K /
12 Page |
View
it Online |
Download Datasheet |
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