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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
IRFN240SMD
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| OCR Text |
...ms, d 2% 2) @ VDD = 50V , L 1.5mH , RG = 25W , Peak IL = 22A , Starting TJ = 25C 3) @ ISD 13.9A , di/dt 150A/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 9.1W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
23.32K /
2 Page |
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SamHop Microelectronics...
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| Part No. |
STB416D
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| OCR Text |
...ting. d.starting t j =25 c,l=0.5mh,v dd = 20v,v gs =10v.(see figure13) _ _ stb416d www.samhop.com.tw may,11,2010 3 nc v ds =-20v,i d =-8a,v...9a v g s =4.5v i d =7.5a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s ... |
| Description |
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
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| File Size |
272.90K /
11 Page |
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APEX[Apex Microtechnology]
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| Part No. |
PA12A PA12
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| OCR Text |
...M = 5A ILIM = 10A 50V 200F 125F 5mH 2.0mH 40V 500F 350F 15mH 3.0mH 35V 2.0mF 850F 50mH 5.0mH 30V 7.0mF 2.5mF 150mH 10mH 25V 25mF 10mF 500mH 20mH 20V 60mF 20mF 1,000mH 30mH 15V 150mF 60mF 2,500mH 50mH *If the inductive load is driven near st... |
| Description |
POWER OPERATIONAL AMPLIFIERS
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| File Size |
174.48K /
4 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE2900
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| OCR Text |
... 25V, starting TJ = +25C, L = 4.5mH, RG = 25, IAS = 14A ISD 14A, di/dt 150A/s, VDD 250V, TJ +175C Pules Width 300s, Duty Cycle 2%.
...9A, RG = 9.1, RD = 8.7, Note 4 - - - - Between lead, .250in. (6.0) mm from package and center of di... |
| Description |
MOSFET N-Ch, Enhancement Mode High Speed Switch
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| File Size |
28.45K /
3 Page |
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it Online |
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SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
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| Part No. |
IRF240SMD
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| OCR Text |
...ms, d 2% 2) @ VDD = 50V , L 1.5mH , RG = 25W , Peak IL = 22A , Starting TJ = 25C 3) @ ISD 13.9A , di/dt 150A/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 9.1W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:... |
| Description |
N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
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| File Size |
22.29K /
2 Page |
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it Online |
Download Datasheet |
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