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5.1-5.9ghz Datasheet PDF File

For 5.1-5.9ghz Found Datasheets File :: 794 Search Time::1.953ms
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				NJRC[New Japan Radio]
Part No.	NJG1705V NJG1705V-C1 NJG1705V-C10 NJG1705V-C2 NJG1705V-C3 NJG1705V-C4 NJG1705V-C5 NJG1705V-C6 NJG1705V-C7 NJG1705V-C8 NJG1705V-C9 NJG1705V-L1 NJG1705V-L10 NJG1705V-L2 NJG1705V-L3 NJG1705V-L4 NJG1705V-L5 NJG1705V-L6 NJG1705V-L7 NJG1705V-L8 NJG1705V-L9 NJG1705V-R1
OCR Text	5/1.9GHz BAND FRONT-END GaAs MMIC nGENERAL DESCRIPTION NJG1705V is a front-end GaAs MMIC including a LNA, local amplifier and a Mixer, designed mainly for 1.5 and 1.9GHz band cellular phone. NJG1705V exhibits low noise of 16dB at 1.5GHz an...
Description	1.5/1.9GHz BAND FRONT-END GaAs MMIC
File Size	560.84K / 26 Page	View it Online	Download Datasheet

				NJRC[New Japan Radio]
Part No.	NJG1709KC1 NJG1709KC1-C1 NJG1709KC1-C10 NJG1709KC1-C11 NJG1709KC1-C2 NJG1709KC1-C3 NJG1709KC1-C4 NJG1709KC1-C5 NJG1709KC1-C6 NJG1709KC1-C7 NJG1709KC1-R2 NJG1709KC1-C8 NJG1709KC1-C9 NJG1709KC1-L1 NJG1709KC1-L10 NJG1709KC1-L11 NJG1709KC1-L2 NJG1709KC1-L3 NJG1709KC1-L4 NJG1709KC1-L5 NJG1709KC1-L6 NJG1709KC1-L7 NJG1709KC1-L8 NJG1709KC1-L9 NJG1709KC1-R1
OCR Text	5/1.9GHz BAND FRONT-END GaAs MMIC nGENERAL DESCRIPTION NJG1709KC1 is a front-end GaAs MMIC including a LNA, a local amplifier and a mixer, designed mainly for 1.5 or 1.9GHz band cellular phone. The ultra small & ultra thin FLP10 package is...
Description	1.5/1.9GHz BAND FRONT-END GaAs MMIC
File Size	777.51K / 29 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	SPM3252
OCR Text	...--RX 2 : ANT 3 : CTL--TX 4 : TX 5 : GND 6 : RX SANYO : CP6 CTL -- TX ( Zo = 50) Specifications Absolute Maximum Ratings at Ta=2...1.9GHz Control voltage +3 / 0V f=1.9GHz Control voltage +3 / 0V f=1.9GHz f=1.9GHz Control voltage +3...
Description	GaAs MMIC SPDT Switch
File Size	18.13K / 3 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	SPM3255
OCR Text	... RX 2 : ANT 3 : CTL - TX 4 : TX 5 : GND 6 : RX SANYO : CP6 0.8 1.1 Ratings 5 -55 to +150 -20 to +70 Unit V C C Electrical Characteristics at Ta = 25C Parameter Insertion Loss Control Current Isolation VSWR Switching Time P1dB S...
Description	Single Power Supply Operation RF Switch MMIC
File Size	28.82K / 3 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP196W Q62702-F1576
OCR Text	... systems * fT = 7.5GHz F = 1.5 dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 196W RIs Q62702-F1576 1=E 2=C 3=E 4=B Package SOT-343 Maximum...
Description	From old datasheet system NPN Silicon RF Transistor(For low noise low distortion broadband amplifiers in antenna and telecommunications) NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)
File Size	60.65K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP196 Q62702-F1320
OCR Text	... systems * fT = 7.5GHz F = 1.5 dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 196 RIs Q62702-F1320 1=C 2=E 3=B 4=E Package SOT-143 Maximum ...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)
File Size	61.07K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFR181W Q62702-F1491
OCR Text	5 mA to 12mA * fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 181W RFs Q62702-F1491 1=B 2=E 3=C Package SOT-323 Maximum...
Description	NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) From old datasheet system
File Size	56.17K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFR181 Q62702-F1314
OCR Text	5 mA to 12mA * fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 181 RFs Q62702-F1314 1=B 2=E 3=C Package SOT-23 Maximum R...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
File Size	57.16K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BFS480 Q62702-F1531
OCR Text	... 480 REs Q62702-F1531 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector ...
Description	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems) NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) From old datasheet system
File Size	52.38K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HA22033
OCR Text	...ier of Micro Wave Application(1.5 to 1.9GHz) Low voltage and low current operation (2.7V, 1.7mA typ.) Low noise (1.4 dB typ. @1.5GHz) High power gain (14 dB typ. @1.5GHz) Built-in matching circuits (50) Small surface mount package (MPAK-5) ...
Description	GaAs MMIC Low Noise Amplifier for Micro Wave Application
File Size	43.33K / 12 Page	View it Online	Download Datasheet

For 5.1-5.9ghz Found Datasheets File :: 794 Search Time::1.953ms
Page :: | 1 | 2 | 3 | <4> | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |